APT30M75BFLL

APT30M75BFLL APT30M75SFLL 300V 44A 0.075Ω BFLL D3PAK TO-247 POWER MOS 7 ® R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 SFLL • Increased Power Dissipation • Easier To Drive • TO-247 or Surface Mount D3PAK Package • FAST RECOVERY BODY DIODE D G S All Ratings: TC = 25°C unless otherwise specified. APT30M75 UNIT Volts Amps 300 44 176 ±30 ±40 329 2.63 -55 to 150 300 44 30 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 1300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 300 44 0.075 250 1000 ±100 3 5 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 22A) Ohms µA nA Volts 1-2003 050-7164 Rev A Zero Gate Voltage Drain Current (VDS = 300V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 240V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Q gs Q gd t d(on) tr t d(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT30M75 BFLL - SFLL Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 200V ID = 44A @ 25°C VGS = 15V VDD = 200V ID = 44A @ 25°C RG = 0.6Ω MIN TYP MAX UNIT pF 3018 771 43 57 21 23 13 3 20 2 ns nC Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD dv/ dt Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery 1 2 dt MIN TYP MAX UNIT Amps Volts V/ns ns 44 176 1.3 8 Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C (Body Diode) (VGS = 0V, IS = -44A) 5 d v/ t rr Qrr IRRM Reverse Recovery Time (IS = -44A, di/dt = 100A/µs) Reverse Recovery Charge (IS = -44A, di/dt = 100A/µs) Peak Recovery Current (IS = -44A, di/dt = 100A/µs) 200 400 1.1 2.7 10 15.1 µC Amps THERMAL CHARACTERISTICS Symbol RθJC RθJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT °C/W 0.38 40 4 Starting Tj = +25°C, L = 1.34mH, RG = 25Ω, Peak IL = 44A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID44A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 APT Reserves the right to change, without notice, the specifications and information contained herein. 0.40 Z JC, THERMAL IMPEDANCE (°C/W) θ 0.35 0.30 0.9 0.7 0.25 0.20 0.15 0.3 0.10 0.05 0 10-5 0.1 0.05 10-4 SINGLE PULSE 1.0 0.5 Note: PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 050-7164 Rev A 1-2003 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Typical Performance Curves 100 RC MODEL APT30M75 BFLL - SFLL 90 ID, DRAIN CURRENT (AMPERES) VGS =15 &10V 8.5V 80 70 60 50 40 30 20 10 7V 6.5V 6V 7.5 8V 0.0329 0.00334 Junction temp. ( ”C) Power (Watts) 0.158 0.00802 0.189 0.165 Case temperature FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 160 140 120 TJ = -55°C 100 80 60 40 TJ = +25°C 20 0 TJ = +125°C 0 2 4 6 8 10 12 14 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS VDS> ID (ON) x RDS(ON) MAX. 250 µSEC. PULSE TEST @