APT30M75BLL APT30M75SLL
300V 44A 0.075Ω
BLL D3PAK
TO-247
POWER MOS 7
®
R
MOSFET
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
SLL
• Increased Power Dissipation • Easier To Drive • TO-247 or Surface Mount D3PAK Package
D G S
All Ratings: TC = 25°C unless otherwise specified.
APT30M75 UNIT Volts Amps
300 44 176 ±30 ±40 329 2.63 -55 to 150 300 44 30
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/°C °C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
1300
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
300 44 0.075 100 500 ±100 3 5
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On-State Resistance
(VGS = 10V, 22A)
Ohms µA nA Volts
1-2003 050-7155 Rev A
Zero Gate Voltage Drain Current (VDS = 300V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 240V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol C iss Coss C rss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT30M75BLL - SLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 200V ID = 44A @ 25°C RESISTIVE SWITCHING VGS = 15V VDD = 200V ID = 44A @ 25°C RG = 0.6Ω 6 INDUCTIVE SWITCHING @ 25°C VDD = 200V, VGS = 15V ID = 44A, RG = 5Ω 6 INDUCTIVE SWITCHING @ 125°C VDD = 200V VGS = 15V ID = 44A, RG = 5Ω
MIN
TYP
MAX
UNIT
3018 771 43 57 21 23 13 3 20 2 268 189 402 220 µJ ns
nC pF
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD t rr Q rr
dv/ dt
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage
1 2
MIN
TYP
MAX
UNIT Amps Volts ns µC
44 176 1.3 416 5.9 5
(Body Diode) (VGS = 0V, IS = - ID44A)
Reverse Recovery Time (IS = -ID44A, dl S /dt = 100A/µs) Reverse Recovery Charge (IS = -ID44A, dl S /dt = 100A/µs) Peak Diode Recovery
dv/ dt 5
V/ns
THERMAL CHARACTERISTICS
Symbol RθJC RθJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT °C/W
0.38 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 1.34mH, RG = 25Ω, Peak IL = 44A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID44A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.40
Z JC, THERMAL IMPEDANCE (°C/W) θ
0.35 0.30
0.9
0.7 0.25 0.20 0.15 0.3 0.10 0.05 0 10-5 0.1 0.05 10-4 SINGLE PULSE 1.0 0.5 Note:
PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC
050-7155 Rev A
1-2003
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Typical Performance Curves
100
RC MODEL
APT30M75BLL - SLL
90
ID, DRAIN CURRENT (AMPERES)
VGS =15 &10V
8.5V
80 70 60 50 40 30 20 10 7V 6.5V 6V 7.5 8V
0.0329
0.00334
Junction temp. ( ”C)
Power (Watts)
0.158
0.00802
0.189
0.165
Case temperature
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
160 140 120 TJ = -55°C 100 80 60 40 TJ = +25°C 20 0 TJ = +125°C 0 2 4 6 8 10 12 14 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
VDS> ID (ON) x RDS(ON) MAX. 250 µSEC. PULSE TEST @
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