APT35GP120J

APT35GP120J 1200V POWER MOS 7 IGBT G The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. ISOTOP ® ® E C E SO 2 T- 27 "UL Recognized" • Low Conduction Loss • Low Gate Charge • Ultrafast Tail Current shutoff • 50 kHz operation @ 800V, 14A • 20 kHz operation @ 800V, 25A • RBSOA rated G E C MAXIMUM RATINGS Symbol VCES VGE VGEM I C1 I C2 I CM RBSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 All Ratings: TC = 25°C unless otherwise specified. APT35GP120J UNIT 1200 ±20 ±30 64 29 140 140A @ 960V 284 -55 to 150 300 Watts °C Amps Volts @ TC = 25°C Reverse Bias Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250µA) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C) MIN TYP MAX UNIT 1200 3 4.5 3.3 3 250 2 6 3.9 Volts Collector-Emitter On Voltage (VGE = 15V, I C = 35A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 35A, Tj = 125°C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 2 I CES I GES µA nA 6-2003 050-7409 Rev D Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) Gate-Emitter Leakage Current (VGE = ±20V) 2500 ±100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres VGEP Qg Qge Qgc RBSOA Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 APT35GP120J Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 600V I C = 35A TJ = 150°C, R G = 5Ω, VGE = 15V, L = 100µH,VCE = 960V Inductive Switching (25°C) VCC = 600V VGE = 15V I C = 35A 4 MIN TYP MAX UNIT 3240 248 31 7.5 150 21 62 140 16 20 94 40 750 1305 680 16 20 147 75 750 2132 1744 µJ ns ns A nC V pF Gate-Emitter Charge Gate-Collector ("Miller ") Charge Reverse Bias Safe Operating Area td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-on Switching Energy (Diode) 5 Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy 4 5 6 R G = 5Ω TJ = +25°C µJ Inductive Switching (125°C) VCC = 600V VGE = 15V I C = 35A R G = 5Ω TJ = +125°C Turn-on Switching Energy (Diode) Turn-off Switching Energy 6 THERMAL AND MECHANICAL CHARACTERISTICS Symbol RΘJC RΘJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT °C/W gm .44 N/A 29.2 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) APT Reserves the right to change, without notice, the specifications and information contained herein. 6-2003 050-7409 Rev D TYPICAL PERFORMANCE CURVES 80 70 IC, COLLECTOR CURRENT (A) VGE = 15V. 250µs PULSE TEST