APT40GP60J

APT40GP60J 600V POWER MOS 7 IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. ® E G C E SO ISOTOP ® 2 T- 27 "UL Recognized" • Low Conduction Loss • Low Gate Charge • Ultrafast Tail Current shutoff MAXIMUM RATINGS Symbol VCES VGE VGEM I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient • 100 kHz operation @ 400V, 25A • 200 kHz operation @ 400V, 16A • SSOA rated C G E All Ratings: TC = 25°C unless otherwise specified. APT40GP60J UNIT 600 ±20 ±30 86 40 160 160A @ 600V 284 -55 to 150 300 Watts °C Amps Volts Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 @ TC = 25°C Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250µA) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C) MIN TYP MAX UNIT 600 3 4.5 2.2 2.1 250 2 6 2.7 Volts Collector-Emitter On Voltage (VGE = 15V, I C = 40A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 40A, Tj = 125°C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2 I CES I GES µA nA Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) Gate-Emitter Leakage Current (VGE = ±20V) 2500 4-2003 050-7410 Rev C ±100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 APT40GP60J Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 300V I C = 40A TJ = 150°C, R G = 5Ω, VGE = 15V, L = 100µH,VCE = 600V Inductive Switching (25°C) VCC(Peak) = 400V VGE = 15V I C = 40A 4 MIN TYP MAX UNIT 4610 395 25 7.5 135 30 40 160 20 29 64 45 385 644 352 450 20 29 89 69 385 972 615 950 µJ ns ns A nC V pF Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching SOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-on Switching Energy (Diode) 5 Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy 4 5 6 R G = 5Ω TJ = +25°C µJ Inductive Switching (125°C) VCC(Peak) = 400V VGE = 15V I C = 40A R G = 5Ω TJ = +125°C Turn-on Switching Energy (Diode) Turn-off Switching Energy 6 THERMAL AND MECHANICAL CHARACTERISTICS Symbol RΘJC RΘJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT °C/W gm .44 N/A 29.2 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. A Combi device is used for the clamping diode as shown in the Eon2 test circuit. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance wtih JEDEC standard JESD24-1. (See Figures 21, 23.) APT Reserves the right to change, without notice, the specifications and information contained herein. 050-7410 Rev C 4-2003 TYPICAL PERFORMANCE CURVES 80 70 IC, COLLECTOR CURRENT (A) VGE = 15V. 250µs PULSE TEST