APT40GP90B2DQ2

TYPICAL PERFORMANCE CURVES ® APT40GP90B2DQ2 APT40GP90B2DQ2G* APT40GP90B2DQ2(G) 900V *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® T-Max® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. • Low Conduction Loss • Low Gate Charge • Ultrafast Tail Current shutoff • SSOA Rated G C E C G E MAXIMUM RATINGS Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current 7 All Ratings: TC = 25°C unless otherwise specified. APT40GP90B2DQ2(G) UNIT Volts 900 ±30 @ TC = 25°C 101 50 160 160A @ 900V 543 -55 to 150 300 Watts °C Amps Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 350µA) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C) MIN TYP MAX Units 900 3 4.5 3.2 2.7 350 2 6 3.9 Collector-Emitter On Voltage (VGE = 15V, I C = 40A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 40A, Tj = 125°C) Collector Cut-off Current (VCE = 900V, VGE = 0V, Tj = 25°C) 2 Volts I CES I GES µA nA 9-2005 050-7491 Rev A Collector Cut-off Current (VCE = 900V, VGE = 0V, Tj = 125°C) Gate-Emitter Leakage Current (VGE = ±20V) 1500 ±100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) td(off) tf Eon1 Eon2 td(on) tr td(off) tf Eon1 Eon2 Eoff Eoff tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 APT40GP90B2DQ2(G) Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VCE = 450V I C = 40A TJ = 150°C, R G = 4.3Ω, VGE = 15V, L = 100µH,VCE = 900V Inductive Switching (25°C) VCC = 600V VGE = 15V RG = 4.3Ω I C = 40A VGE = 15V MIN TYP MAX UNIT pF V nC 3300 325 35 7.5 145 22 55 160 14 23 90 60 TBD 1350 795 14 23 130 90 TBD 2280 1245 µJ ns ns A Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy 44 55 4 5 Turn-on Switching Energy (Diode) 6 TJ = +25°C Inductive Switching (125°C) VCC = 600V VGE = 15V RG = 4.3Ω I C = 40A µJ Turn-on Switching Energy (Diode) 6 TJ = +125°C THERMAL AND MECHANICAL CHARACTERISTICS Symbol RθJC RθJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT °C/W gm .23 .61 5.9 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 9-2005 Rev A 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 Continuous current limited by package lead temperature. APT Reserves the right to change, without notice, the specifications and information contained h 050-7491 TYPICAL PERFORMANCE CURVES 160 140 IC, COLLECTOR CURRENT (A) 120 100 80 60 40 20 0 0 1 2 3 4 5 6 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 250µs PULSE TEST