APT40M35JVFR

APT40M35JVFR 400V 93A S G D 0.035Ω S POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. SO 2 T- 27 "UL Recognized" ISOTOP ® • Faster Switching • Lower Leakage • Popular SOT-227 Package MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage • Avalanche Energy Rated • FAST RECOVERY BODY DIODE G D S All Ratings: TC = 25°C unless otherwise specified. APT40M35JVFR UNIT Volts Amps 400 93 372 ±30 ±40 700 5.6 -55 to 150 300 93 50 4 1 Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 3600 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 400 93 0.035 250 1000 ±100 2 4 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, ID = 46.5A) Ohms µA 7-2004 050-5892 Rev A Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 320V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5mA) nA Volts CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol C iss Coss Crss Qg Qgs Qgd t d(on) tr t d(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT40M35JVFR Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 200V ID = 93A @ 25°C VGS = 15V VDD = 200V ID = 93A @ 25°C RG = 0.6Ω MIN TYP MAX UNIT pF 16800 2400 1070 710 80 340 20 30 75 14 20160 3360 1605 1065 120 510 40 60 115 28 ns nC Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD dv/ dt Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery 1 2 dt MIN TYP MAX UNIT Amps Volts V/ns ns µC Amps 93 372 1.3 15 Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C (Body Diode) (VGS = 0V, IS = - 93A) 5 d v/ t rr Q rr IRRM Reverse Recovery Time (IS = -93A, di/dt = 100A/µs) Reverse Recovery Charge (IS = -93A, di/dt = 100A/µs) Peak Recovery Current (IS = -93A, di/dt = 100A/µs) 300 600 2.2 9 16 33 THERMAL/ PACKAGE CHARACTERISTICS Symbol RθJC RθJA VIsolation Torque Characteristic Junction to Case Junction to Ambient RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) Maximum Torque for Device Mounting Screws and Electrical Terminations. MIN TYP MAX UNIT °C/W Volts 0.18 40 2500 10 lb•in 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting T = +25°C, L = 0.83mH, R = 25Ω, Peak I = 93A j G L 5 I ≤ I = 93A, di/ = 100A/µs, T ≤ 150°C, R = 2.0Ω V = 400V. S D j G R dt APT Reserves the right to change, without notice, the specifications and information contained herein. 0.2 Z JC, THERMAL IMPEDANCE (°C/W) θ 0.1 0.05 D=0.5 0.2 0.1 0.01 0.005 0.05 0.02 0.01 SINGLE PULSE Note: PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 050-5892 Rev A 7-2004 0.001 0.0005 10-5 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10 APT40M35JVFR 200 ID, DRAIN CURRENT (AMPERES) VGS=6.5V, 7V, 10V & 15V ID, DRAIN CURRENT (AMPERES) 200 VGS=15V 10V 6.5V 6V 160 6V 160 7V 120 5.5V 80 5V 40 4.5V 0 40 80 120 160 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 0 120 5.5V 80 5V 40 4.5V 0 1 2 3 4 5 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS 0 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 200 ID, DRAIN CURRENT (AMPERES) TJ = -55°C TJ = +125°C VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @