TYPICAL PERFORMANCE CURVES ®
APT45GP120B2DQ2 APT45GP120B2DQ2G*
APT45GP120B2DQ2(G) 1200V
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
POWER MOS 7 IGBT
®
T-MaxTM
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. • Low Conduction Loss • Low Gate Charge • Ultrafast Tail Current shutoff • 100 kHz operation @ 800V, 16A • 50 kHz operation @ 800V, 28A • RBSOA Rated
G
C
E
C G E
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM RBSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current
7
All Ratings: TC = 25°C unless otherwise specified.
APT45GP120B2DQ2(G) UNIT Volts
1200 ±30
@ TC = 25°C
113 54 170 170A @ 960V 625 -55 to 150 300
Watts °C Amps
Continuous Collector Current @ TC = 110°C Pulsed Collector Current
1
@ TC = 150°C
Reverse Biad Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 750µA) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C) MIN TYP MAX Units
1200 3 4.5 3.3 3.0 750
2 2
6 3.9
Collector-Emitter On Voltage (VGE = 15V, I C = 45A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 45A, Tj = 125°C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C)
Volts
I CES I GES
Gate-Emitter Leakage Current (VGE = ±20V)
±100
nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
050-7433
APT Website - http://www.advancedpower.com
Rev A
6-2005
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C)
µA
3000
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc RBSOA td(on) td(off) tf Eon1 Eon2 td(on) tr td(off) tf Eon1 Eon2 Eoff Eoff tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT45GP120B2DQ2(G)
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VCE = 600V I C = 45A TJ = 150°C, R G = 5Ω, VGE = VGE = 15V MIN TYP MAX UNIT pF V nC
3995 300 55 7.5 185 25 80 170 18 29 100 38 900 1870 905 18 29 150 80 900 3080 2255 µJ
ns ns A
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Reverse Bias Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy
44 55 4 5
15V, L = 100µH,VCE = 960V Inductive Switching (25°C) VCC = 600V VGE = 15V I C = 45A RG = 5Ω
Turn-on Switching Energy (Diode)
6
TJ = +25°C Inductive Switching (125°C) VCC =600V VGE = 15V I C = 45A RG = 5Ω
µJ
Turn-on Switching Energy (Diode)
6
TJ = +125°C
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RθJC RθJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT °C/W gm
.20 .61 5.9
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 Continuous current limited by package lead temperature.
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-7433
Rev A
6-2005
TYPICAL PERFORMANCE CURVES
90 80 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 70 60 50 40 30 20 10 0
90 80 70 60 50 40 30 20 10 0
APT45GP120B2DQ2(G)
TJ = 25°C TJ = 125°C
TJ = 25°C TJ = 125°C
160 140 120 100
FIGURE 1, Output Characteristics(TJ = 25°C)
250µs PULSE TEST
很抱歉,暂时无法提供与“APT45GP120B2DQ2”相匹配的价格&库存,您可以联系我们找货
免费人工找货