APT5010JLLU2

APT5010JLLU2 ISOTOP® Boost chopper MOSFET Power Module K VDSS = 500V RDSon = 100mW max @ Tj = 25°C ID = 41A @ Tc = 25°C Application · AC and DC motor control · Switched Mode Power Supplies · Power Factor Correction · Brake switch Features · Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged · ISOTOP® Package (SOT-227) · Very low stray inductance · High level of integration Benefits · Outstanding performance at high frequency operation · Direct mounting to heatsink (isolated package) · Low junction to case thermal resistance · Very rugged · Low profile D G S S G D K ISOTOPÒ Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS IFAV IFRMS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Maximum Average Forward Current Duty cycle=0.5 RMS Forward Current (Square wave, 50% duty) Tc = 25°C Tc = 80°C Max ratings 500 41 30 164 ±30 100 378 41 50 1600 30 39 Unit V A V mW W A mJ A Tc = 25°C Tc = 80°C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–7 APT5010JLLU2 – Rev 0 April, 2004 APT5010JLLU2 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy u Turn-off Switching Energy Turn-on Switching Energy u Turn-off Switching Energy Test Conditions VGS = 0V, ID = 250µA VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V Min 500 Tj = 25°C Tj = 125°C 3 Typ Max 100 500 100 5 ±100 Unit V µA mW V nA Unit pF VGS = 10V, ID = 23A VGS = VDS, ID = 2.5mA VGS = ±20 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID = 41A @ TJ=25°C Resistive switching @ 25°C VGS = 15V VBus = 250V ID = 41A @ TJ=25°C RG = 0.6W Inductive Switching @ 25°C Vbus = 330V, VGS=15V ID=46A, RG=5Ω Inductive Switching @ 125°C Vbus = 330V, VGS=15V ID=46A, RG=5Ω Dynamic Characteristics Min Typ 4360 894 60 96 24 49 11 15 25 3 543 509 843 593 µJ µJ Max nC ns Eon Eoff Eon Eoff Symbol VF IRM CT trr u Eon includes diode reverse recovery Characteristic Diode Forward Voltage Diode ratings and characteristics Test Conditions IF = 30A IF = 60A IF = 30A VR = 600V VR = 600V VR = 200V IF=1A,VR=30V di/dt =100A/µs IF = 30A VR = 400V di/dt =200A/µs Min Typ 1.6 1.9 1.4 44 Tj = 25°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 125°C 23 85 160 4 8 130 700 70 1300 30 ns Max 1.8 250 500 Unit V µA pF Maximum Reverse Leakage Current Junction Capacitance Reverse Recovery Time Reverse Recovery Time Tj = 125°C Tj = 25°C Tj = 125°C Qrr trr Qrr IRRM Reverse Recovery Charge Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 30A VR = 400V di/dt =1000A/µs nC ns nC A APT website – http://www.advancedpower.com 2–7 APT5010JLLU2 – Rev 0 April, 2004 IRRM Maximum Reverse Recovery Current A APT5010JLLU2 Thermal and package characteristics Symbol Characteristic RthJC RthJA VISOL TJ,TSTG TL Torque Wt Junction to Case Junction to Ambient (IGBT & Diode) RMS Isolation Voltage, any terminal to case t =1 min, I isol