APT5014BLL

500V 35A 0.140Ω APT5014BLL APT5014SLL D3PAK TO-247 POWER MOS 7 ® R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 • Increased Power Dissipation • Easier To Drive • TO-247 or Surface Mount D3PAK Package D G S All Ratings: TC = 25°C unless otherwise specified. APT5014BLL-SLL UNIT Volts Amps 500 35 140 ±30 ±40 403 3.22 -55 to 150 300 35 30 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 1300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 500 0.140 100 500 ±100 3 5 (VGS = 10V, 17.5A) Ohms µA nA Volts 6-2004 050-7006 Rev B Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol C iss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT5014 BLL - SLL Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 250V ID = 35A @ 25°C RESISTIVE SWITCHING VGS = 15V VDD = 250V ID = 35A @ 25°C RG = 1.6Ω 6 INDUCTIVE SWITCHING @ 25°C VDD = 333V, VGS = 15V ID = 35A, RG = 5Ω 6 INDUCTIVE SWITCHING @ 125°C VDD = 333V, VGS = 15V ID = 35A, RG = 5Ω MIN TYP MAX UNIT 3261 704 50 72 20 36 11 6 23 3 325 249 545 288 MIN TYP MAX UNIT Amps Volts ns µC nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy ns µJ SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr Q rr dv/ dt Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage 1 2 35 140 1.3 510 10 8 MIN TYP MAX (Body Diode) (VGS = 0V, IS = - 35A) Reverse Recovery Time (IS = -35A, dl S/dt = 100A/µs) Reverse Recovery Charge (IS = -35A, dl S/dt = 100A/µs) Peak Diode Recovery dv/ dt 5 V/ns THERMAL CHARACTERISTICS Symbol RθJC RθJA Characteristic Junction to Case Junction to Ambient UNIT °C/W 0.31 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting Tj = +25°C, L = 2.12mH, RG = 25Ω, Peak IL = 35A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -35A di/dt ≤ 700A/µs VR ≤ 500V TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.35 Z JC, THERMAL IMPEDANCE (°C/W) θ 0.30 0.25 0.9 0.7 0.20 0.15 0.10 0.05 0 0.5 Note: PDM t1 t2 6-2004 0.3 050-7006 Rev B 0.1 0.05 10-5 10-4 SINGLE PULSE Peak TJ = PDM x ZθJC + TC Duty Factor D = t1/t2 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves 100 15 &10V ID, DRAIN CURRENT (AMPERES) APT5014 BLL_SLL 8V 80 RC MODEL Junction temp. (°C) 0.119 Power (watts) 0.191 Case temperature. (°C) 0.319F 0.0135F 60 7V 6.5V 20 20 6V 5.5V 5V FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.2 V NORMALIZED TO = 10V @ 17.5A 0 100 GS ID, DRAIN CURRENT (AMPERES) 80 1.15 1.10 1.05 VGS=20V 1.0 0.95 0.90 60 VGS=10V 40 TJ = +125°C TJ = +25°C TJ = -55°C 0 1 2 3 4 5 6 7 8 9 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS 20 0 0 35 30 25 20 15 10 5 0 BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 10 20 30 40 50 60 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT ID, DRAIN CURRENT (AMPERES) 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 25 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 2.5 I D = 17.5A = 10V V 2.0 VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) GS 1.1 1.0 0.9 0.8 0.7 0.6 -50 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-7006 Rev B 6-2004 Typical Performance Curves 140 OPERATION HERE LIMITED BY RDS (ON) 10,000 APT5014 BLL_SLL Ciss ID, DRAIN CURRENT (AMPERES) 50 C, CAPACITANCE (pF) 100µS 1,000 Coss 10 1mS TC =+25°C TJ =+150°C SINGLE PULSE 100 Crss 10mS 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE IDR, REVERSE DRAIN CURRENT (AMPERES) 1 1 5 10 50 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA I D 10 16 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) = 35A 200 100 50 TJ =+150°C TJ =+25°C 14 12 10 8 6 4 2 20 40 60 80 100 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 60 50 td(off) 0 0 VDS=100V VDS=250V VDS=400V 10 5 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 70 60 50 V DD G = 333V R = 5Ω T = 125°C J L = 100µH tf td(on) and td(off) (ns) 40 30 20 10 0 V DD G = 333V R tr and tf (ns) = 5Ω T = 125°C J 40 30 20 L = 100µH td(on) tr 10 0 0 30 40 50 60 ID (A) FIGURE 14, DELAY TIMES vs CURRENT V DD G 10 20 30 40 50 60 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 1400 1200 SWITCHING ENERGY (µJ) V I DD 0 10 20 1000 = 333V = 333V R = 5Ω D J = 35A SWITCHING ENERGY (µJ) 800 T = 125°C J T = 125°C L = 100µH E ON i ncludes diode reverse recovery. Eoff L = 100µH EON i ncludes diode reverse recovery. 1000 800 600 400 200 0 600 Eon 400 Eon 6-2004 200 050-7006 Rev B Eoff 30 40 50 60 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT 0 0 10 20 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE 0 5 Typical Performance Curves Gate Voltage APT5014 BLL_SLL 10 % td(on) tr 90% Drain Current T = 125 C J 90% Gate Voltage t T = 125 C J d(off) Drain Voltage 90% tf 5% Switching Energy 10 % Drain Voltage Switching Energy 10% 0 Drain Current Figure 18, Turn-on Switching Waveforms and Definitions Figure 19, Turn-off Switching Waveforms and Definitions APT30DF60 V DD ID V DS G D.U.T. Figure 20, Inductive Switching Test Circuit TO-247 Package Outline Drain (Heat Sink) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC D PAK Package Outline 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) 13.41 (.528) 13.51 (.532) 3 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 1.04 (.041) 1.15 (.045) Drain 20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150) Revised 4/18/95 13.79 (.543) 13.99 (.551) Revised 8/29/97 11.51 (.453) 11.61 (.457) 0.46 (.018) 0.56 (.022) {3 Plcs} 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 19.81 (.780) 20.32 (.800) 1.22 (.048) 1.32 (.052) 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Source Drain Gate Dimensions in Millimeters (Inches) APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 050-7006 Rev B Gate Drain Source 5.45 (.215) BSC {2 Plcs.} Heat Sink (Drain) and Leads are Plated 6-2004 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) 1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 3.81 (.150) 4.06 (.160) (Base of Lead)