APT5024BVR

500V APT5024BVR APT5024SVR BVR D3PAK TO-247 22A 0.240Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • Lower Leakage • Avalanche Energy Rated • TO-247 or Surface Mount D3PAK Package SVR D G S MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 All Ratings: TC = 25°C unless otherwise specified. APT5024BVR_SVR UNIT Volts Amps 500 22 88 ±30 ±40 280 2.24 -55 to 150 300 22 30 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 1210 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 500 22 0.24 25 250 ±100 2 4 (VDS > ID(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]) Ohms µA nA Volts 5-2004 050-5525 Rev C Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT5024BVR_SVR Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID[Cont.] @ 25°C VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25°C RG = 1.6Ω MIN TYP MAX UNIT 3600 470 180 140 22 65 11 10 50 7 4320 660 270 210 35 95 22 20 75 14 ns nC pF Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr Q rr Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage 1 2 MIN TYP MAX UNIT Amps Volts ns µC 22 88 1.3 415 6.6 (Body Diode) (VGS = 0V, IS = - ID[Cont.]) Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/µs) Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100A/µs) THERMAL CHARACTERISTICS Symbol RθJC RθJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT °C/W 0.45 40 3 See MIL-STD-750 Method 3471 4 Starting T = +25°C, L = 5.00mH, R = 25Ω, Peak I = 22A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. 0.5 Z JC, THERMAL IMPEDANCE (°C/W) θ D=0.5 0.1 0.05 0.2 0.1 0.05 0.02 0.01 0.005 0.01 SINGLE PULSE Note: PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 050-5525 Rev C 5-2004 0.001 10-5 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10-4 APT5024BVR_SVR 50 ID, DRAIN CURRENT (AMPERES) VGS=7V, 10V & 15V 6V ID, DRAIN CURRENT (AMPERES) 50 40 40 VGS=15V VGS=7V & 10V 6V 5.5V 30 5.5V 30 20 5V 10 4.5V 4V 0 0 50 100 150 200 250 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 20 5V 10 4.5V 4V 0 2 4 6 8 10 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS 0 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 50 ID, DRAIN CURRENT (AMPERES) TJ = -55°C VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @