500V
APT5024BVR APT5024SVR
BVR D3PAK
TO-247
22A 0.240Ω
POWER MOS V
®
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
• Faster Switching • Lower Leakage • Avalanche Energy Rated • TO-247 or Surface Mount D3PAK Package
SVR
D G S
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
All Ratings: TC = 25°C unless otherwise specified.
APT5024BVR_SVR UNIT Volts Amps
500 22 88 ±30 ±40 280 2.24 -55 to 150 300 22 30
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/°C °C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
1210
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current
2
MIN
TYP
MAX
UNIT Volts Amps
500 22 0.24 25 250 ±100 2 4
(VDS > ID(on) x R DS(on) Max, VGS = 10V)
2
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID[Cont.])
Ohms µA nA Volts
5-2004 050-5525 Rev C
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT5024BVR_SVR
Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID[Cont.] @ 25°C VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25°C RG = 1.6Ω MIN TYP MAX UNIT
3600 470 180 140 22 65 11 10 50 7
4320 660 270 210 35 95 22 20 75 14
ns nC pF
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD t rr Q rr Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage
1 2
MIN
TYP
MAX
UNIT Amps Volts ns µC
22 88 1.3 415 6.6
(Body Diode) (VGS = 0V, IS = - ID[Cont.])
Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/µs) Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100A/µs)
THERMAL CHARACTERISTICS
Symbol RθJC RθJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT °C/W
0.45 40
3 See MIL-STD-750 Method 3471 4 Starting T = +25°C, L = 5.00mH, R = 25Ω, Peak I = 22A j G L
1 Repetitive Rating: Pulse width limited by maximum junction
temperature. 2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.5
Z JC, THERMAL IMPEDANCE (°C/W) θ
D=0.5 0.1 0.05 0.2 0.1 0.05 0.02 0.01 0.005 0.01 SINGLE PULSE Note:
PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC
050-5525 Rev C
5-2004
0.001 10-5
10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10-4
APT5024BVR_SVR
50
ID, DRAIN CURRENT (AMPERES)
VGS=7V, 10V & 15V 6V
ID, DRAIN CURRENT (AMPERES)
50
40
40
VGS=15V VGS=7V & 10V
6V 5.5V
30
5.5V
30
20 5V 10 4.5V 4V 0 0 50 100 150 200 250 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
20 5V 10 4.5V 4V 0 2 4 6 8 10 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS 0
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
50
ID, DRAIN CURRENT (AMPERES)
TJ = -55°C
VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @
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