APT50GF60BR

APT50GF60BR APT50GF60BR 600V 75A Fast IGBT The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. TO-247 C • Low Forward Voltage Drop • Low Tail Current • Avalanche Rated MAXIMUM RATINGS Symbol VCES VCGR VGE I C1 I C2 I CM I LM EAS PD TJ,TSTG TL Parameter Collector-Emitter Voltage • High Freq. Switching to 20KHz • Ultra Low Leakage Current • RBSOA and SCSOA Rated G C E G E All Ratings: TC = 25°C unless otherwise specified. APT50GF60BR UNIT 600 600 ±20 75 50 160 100 75 300 -55 to 150 300 °C mJ Watts Amps Volts Collector-Gate Voltage (RGE = 20KW) Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 90°C Pulsed Collector Current 1 @ TC = 25°C RBSOA Clamped Inductive Load Current @ Rg = 11W TC = 125°C Single Pulse Avalanche Energy Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. 2 STATIC ELECTRICAL CHARACTERISTICS Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1.0mA) Gate Threshold Voltage (VCE = VGE, I C = 700µA, Tj = 25°C) MIN TYP MAX UNIT 600 4.5 5.5 2.1 2.2 6.5 2.7 2.8 0.5 5.0 6-2000 052-6207 Rev E Volts Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 125°C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C) Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V) I CES I GES mA nA ±100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com USA EUROPE 405 S.W. Columbia Street Chemin de Magret Bend, Oregon 97702 -1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets gfe Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT50GF60BR Test Conditions Capacitance VGE = 0V VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCC = 0.66VCES I C = I C2 Resistive Switching (25°C) VGE = 15V VCC = 0.66VCES I C = I C2 RG = 10W MIN TYP MAX UNIT 2250 255 155 175 18 100 29 118 150 190 28 ns nC pF Gate-Emitter Charge Gate-Collector ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Total Switching Losses Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Switching Losses Forward Transconductance Inductive Switching (150°C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 10W TJ = +150°C 75 265 185 1.8 2.4 4.2 ns mJ Inductive Switching (25°C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 10W TJ = +25°C VCE = 20V, I C = I C2 30 80 240 43 3.6 6 mJ S ns THERMAL AND MECHANICAL CHARACTERISTICS Symbol RQJC RQJA WT Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT °C/W 0.42 40 0.22 oz gm Package Weight 6.1 10 lb•in N•m Torque Mounting Torque (using a 6-32 or 3mm Binding Head Machine Screw) 1.1 6-2000 1 2 3 Repetitive Rating: Pulse width limited by maximum junction temperature. IC = IC2, RGE = 25W, L = 100µH, Tj = 25°C See MIL-STD-750 Method 3471 APT Reserves the right to change, without notice, the specifications and information contained herein. 052-6207 Rev E APT50GF60BR 100 IC, COLLECTOR CURRENT (AMPERES) IC, COLLECTOR CURRENT (AMPERES) 100 VGE=13, 15 & 17V VGE=13, 15 & 17V 80 11V 60 10V 40 9V 20 8V 7V 0 0 4 8 12 16 20 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 2, Typical Output Characteristics (TJ = 150°C) 150 IC, COLLECTOR CURRENT (AMPERES) 250µSec. Pulse Test VGE = 15V 80 11V 60 40 10V 20 9V 8V 0 4 8 12 16 20 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 1, Typical Output Characteristics (TJ = 25°C) 100 IC, COLLECTOR CURRENT (AMPERES) 0 100 80 TC=-55°C TC=+25°C TC=+150°C 60 10 OPERATION HERE LIMITED BY VCE (SAT) 100µS 40 1mS TC =+25°C TJ =+150°C SINGLE PULSE 1 1 10 100 600 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 4, Maximum Safe Operating Area 20 10mS 0 0 1 2 3 4 5 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 3, Typical Transfer Characteristics VGE, GATE-TO-EMITTER VOLTAGE (VOLTS) 10,000 20 IC = IC2 TJ = +25°C 16 C, CAPACITANCE (pF) Cies f = 1MHz VCE =120V VCE =300V 12 1,000 Coes 8 VCE =480V 4 Cres 100 0.01 0.1 1.0 10 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 5, Typical Capacitance vs Collector-To-Emitter Voltage 1.0 ZqJC, THERMAL IMPEDANCE (°C/W) 0 40 80 120 160 200 Qg, TOTAL GATE CHARGE (nC) Figure 6, Gate Charges vs Gate-To-Emitter Voltage 0 0.5 D=0.5 0.1 0.05 0.2 0.1 0.05 0.01 0.005 0.02 0.01 Note: PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC SINGLE PULSE 0.001 10 -5 052-6207 10 -4 10 -3 10 -2 10 -1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 10 Rev E 6-2000 APT50GF60BR 4.0 IC, COLLECTOR CURRENT (AMPERES) VCE(SAT), COLLECTOR-TO-EMITTER SATURATION VOLTAGE (VOLTS) 80 3.5 3.0 2.5 2.0 0.5 IC2 1.5 60 IC1 IC2 40 20 BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED) 1.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 8, Typical VCE(SAT) Voltage vs Junction Temperature 1.2 SWITCHING ENERGY LOSSES (mJ) 50 75 100 125 150 TC, CASE TEMPERATURE (°C) Figure 9, Maximum Collector Current vs Case Temperature 10 VCC = 0.66 VCES VGE = +15V TJ = +25°C IC = IC2 0 25 1.1 8 Eon 6 1.0 0.9 4 Eoff 2 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 10, Breakdown Voltage vs Junction Temperature 20 VCC = 0.66 VCES VGE = +15V RG = 10W 20 40 60 80 100 RG, GATE RESISTANCE (OHMS) Figure 11, Typical Switching Energy Losses vs Gate Resistance 2.5 SWITCHING ENERGY LOSSES (mJ) VCC = 0.66 VCES VGE = +15V TJ = +125°C RG = 10W. 00 TOTAL SWITCHING ENERGY LOSSES (mJ) 10 IC1 2.0 Eoff 5 IC2 1.5 0.5 IC2 1 1.0 Eon 0.5 0.5 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 12, Typical Switching Energy Losses vs. Junction Temperature 100 SWITCHING LOAD CURRENT (A) 10 20 30 40 50 IC, COLLECTOR CURRENT (AMPERES) Figure 13, Typical Switching Energy Losses vs Collector Current For Both: Duty Cycle = 50% TJ = +125°C Tsink = +90°C Gate drive as specified Power dissapation = 83W ILOAD = IRMS of fundamental 00 10 Rev E 6-2000 1 0.1 1.0 10 F, FREQUENCY (KHz) Figure 14, Typical Load Current vs Frequency 100 1000 052-6207 APT50GF60BR 90% A 10% t d (on) 90% V CC IC IC t d(off) 100uH 90% V CC 10 tr 10% tf E on E off *DRIVER SAME TYPE AS D.U.T. VCC = 0.66 VCES Ets = E on + E off A 10 IC D.U.T. V CLAMP DRIVER* tor e uc arg Ind -Ch e Pr 10% D.U.T. V CE(SAT) Figure 16, Switching Loss Test Circuit and Waveforms 2 VCE(off) 90% VGE(on) V CC 0.1 F 1KV 50 F 600V RL = 2 . 66 VCES I C2 D.U.T. 10% 1 VGE(off) t d (on) tr t d(off) tf From Gate Drive Circuitry R G = 10 Ohms VCE(on) 1 Figure 17, Resistive Switching Time Test Circuit and Waveforms T0-247 Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 20.80 (.819) 21.46 (.845) 3.55 (.138) 3.81 (.150) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) Collector (Cathode) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) Gate Collector (Cathode) Emitter (Anode) 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. APT Reserves the right to change, without notice, the specifications and information contained herein. 052-6207 Dimensions in Millimeters and (Inches) Rev E 6-2000