APT50GP60B2DQ2

TYPICAL PERFORMANCE CURVES ® APT50GP60B2DQ2 APT50GP60B2DQ2G* APT50GP60B2DQ2(G) 600V *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® (B2) T-Max® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. • Low Conduction Loss • Low Gate Charge • Ultrafast Tail Current shutoff • SSOA Rated C G E MAXIMUM RATINGS Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current 7 All Ratings: TC = 25°C unless otherwise specified. APT50GP60B2DQ2(G) UNIT Volts 600 ±30 @ TC = 25°C 150 72 190 190A @ 600V 625 -55 to 150 300 Watts °C Amps Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 525µA) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C) MIN TYP MAX Units 600 3 4.5 2.2 2.1 525 2 6 2.7 Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 125°C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2 Volts I CES I GES Gate-Emitter Leakage Current (VGE = ±20V) ±100 nA CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. 050-7495 APT Website - http://www.advancedpower.com Rev A 11-2005 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) µA 3000 DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) td(off) tf Eon1 Eon2 td(on) tr td(off) tf Eon1 Eon2 Eoff Eoff tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 APT50GP60B2DQ2(G) Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VCE = 300V I C = 50A TJ = 150°C, R G = 4.3Ω, VGE = 15V, L = 100µH,VCE = 600V Inductive Switching (25°C) VCC = 400V VGE = 15V RG = 4.3Ω I C = 50A VGE = 15V MIN TYP MAX UNIT pF V nC 5700 465 30 7.5 165 40 50 190 19 36 85 60 465 835 635 19 36 115 85 465 1260 1060 µJ ns ns A Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy 44 55 4 5 Turn-on Switching Energy (Diode) 6 TJ = +25°C Inductive Switching (125°C) VCC = 400V VGE = 15V RG = 4.3Ω I C = 50A µJ Turn-on Switching Energy (Diode) 6 TJ = +125°C THERMAL AND MECHANICAL CHARACTERISTICS Symbol RθJC RθJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT °C/W gm .20 .67 6.10 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 Continuous current limited by package lead temperature. APT Reserves the right to change, without notice, the specifications and information contained herein. 050-7495 Rev A 11-2005 TYPICAL PERFORMANCE CURVES 70 60 50 40 70 60 50 40 30 20 10 0 APT50GP60B2DQ2(G) IC, COLLECTOR CURRENT (A) TJ = -55°C 30 20 IC, COLLECTOR CURRENT (A) TJ = -55°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C 10 0 100 FIGURE 1, Output Characteristics(TJ = 25°C) 250µs PULSE TEST