APT50M75JLL

APT50M75JLL 500V 51A 0.075Ω S G D S POWER MOS 7 ® R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 SO 2 T- 27 "UL Recognized" ISOTOP ® • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package D G S All Ratings: TC = 25°C unless otherwise specified. APT50M75JLL UNIT Volts Amps 500 51 204 ±30 ±40 460 3.68 -55 to 150 300 51 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 2500 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 500 0.075 100 500 ±100 3 5 (VGS = 10V, ID = 25.5A) Ohms µA nA Volts 9-2004 050-7001 Rev E Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT50M75JLL Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 250V ID = 51A @ 25°C RESISTIVE SWITCHING VGS = 15V VDD = 250V ID = 51A @ 25°C RG = 0.6Ω 6 INDUCTIVE SWITCHING @ 25°C VDD = 333V, VGS = 15V ID = 51A, RG = 5Ω 6 INDUCTIVE SWITCHING @ 125°C VDD = 333V VGS = 15V ID = 51A, RG = 5Ω MIN TYP MAX UNIT 5590 1180 85 125 33 65 8 17 21 3 675 650 1110 755 MIN TYP MAX UNIT Amps Volts ns µC nC pF Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy ns µJ SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr Q rr dv/ dt Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage 1 2 51 228 1.3 655 13.5 8 MIN TYP MAX (Body Diode) (VGS = 0V, IS = - 51A) Reverse Recovery Time (IS = -51A, dl S/dt = 100A/µs) Reverse Recovery Charge (IS = -51A, dlS /dt = 100A/µs) Peak Diode Recovery d v/ dt 5 V/ns THERMAL CHARACTERISTICS Symbol RθJC RθJA Characteristic Junction to Case Junction to Ambient UNIT °C/W 0.27 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting Tj = +25°C, L = 1.92mH, RG = 25Ω, Peak IL = 51A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID51A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.30 Z JC, THERMAL IMPEDANCE (°C/W) θ 0.25 0.20 0.9 0.7 0.15 0.5 Note: PDM t1 t2 9-2004 0.10 0.3 050-7001 Rev E 0.05 0 0.1 0.05 10-5 Peak TJ = PDM x ZθJC + TC Duty Factor D = t1/t2 SINGLE PULSE 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves Junction temp. (°C) RC MODEL 120 100 80 60 40 APT50M75 JLL 15 &10V 8V 7.5V ID, DRAIN CURRENT (AMPERES) 0.0409 0.0246F 7V Power (watts) 0.255 0.406F 6.5V 0.00361 Case temperature. (°C) 148F 6V 20 5.5V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.2 V GS 0 140 ID, DRAIN CURRENT (AMPERES) VDS> ID (ON) x RDS(ON) MAX. 250µSEC. PULSE TEST @