APT50M75JLLU3

APT50M75JLLU3 ISOTOP® Buck chopper MOSFET Power Module D VDSS = 500V RDSon = 75mW max @ Tj = 25°C ID = 51A @ Tc = 25°C Application · AC and DC motor control · Switched Mode Power Supplies Features · Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged · ISOTOP® Package (SOT-227) · Very low stray inductance · High level of integration Benefits · Outstanding performance at high frequency operation · Direct mounting to heatsink (isolated package) · Low junction to case thermal resistance · Very rugged · Low profile G S A S G D A ISOTOPÒ Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS IFAV IFRMS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Maximum Average Forward Current Duty cycle=0.5 RMS Forward Current (Square wave, 50% duty) Tc = 25°C Tc = 80°C Max ratings 500 51 39 204 ±30 75 290 51 50 2500 30 39 Unit V A V mW W A mJ A Tc = 25°C Tc = 80°C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–8 APT50M75JLLU3 – Rev 0 April, 2004 APT50M75JLLU3 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V, ID = 250µA VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V Min 500 Tj = 25°C Tj = 125°C 3 Typ Max 100 500 75 5 ±100 Unit V µA mW V nA VGS = 10V, ID = 25.5A VGS = VDS, ID = 1mA VGS = ±20 V, VDS = 0V Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy u Turn-off Switching Energy v Turn-on Switching Energy u Turn-off Switching Energy v Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID = 51A Resistive Switching VGS = 15V VBus = 250V ID = 51A RG = 0.6W Inductive switching @ 25°C VGS = 15V, VBus = 330V ID = 51A, RG = 5Ω Inductive switching @ 125°C VGS = 15V, VBus = 330V ID = 51A, RG = 5Ω Min Typ 5590 1180 85 123 33 65 10 20 21 5 755 726 1241 846 µJ ns Max Unit pF nC µJ u Eon includes diode reverse recovery v In accordance with JEDEC standard JESD24-1. APT website – http://www.advancedpower.com 2–8 APT50M75JLLU3 – Rev 0 April, 2004 APT50M75JLLU3 Diode ratings and characteristics Symbol VF IRM CT trr Reverse Recovery Time IRRM Qrr trr Qrr IRRM Maximum Reverse Recovery Current Reverse Recovery Charge Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 30A VR = 400V di/dt =1000A/µs IF = 30A VR = 400V di/dt =200A/µs Characteristic Diode Forward Voltage Maximum Reverse Leakage Current Junction Capacitance Reverse Recovery Time Test Conditions IF = 30A IF = 60A IF = 30A VR = 600V VR = 600V VR = 200V IF=1A,VR=30V di/dt =100A/µs Min Typ 1.6 1.9 1.4 44 Tj = 25°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 125°C 23 85 160 4 8 130 700 70 1300 30 ns Max 1.8 250 500 Unit V µA pF Tj = 125°C Tj = 25°C Tj = 125°C A nC ns nC A Thermal and package characteristics Symbol Characteristic RthJC RthJA VISOL TJ,TSTG TL Torque Wt Junction to Case Junction to Ambient (IGBT & Diode) RMS Isolation Voltage, any terminal to case t =1 min, I isol