APT50M75B2LL APT50M75LLL
POWER MOS 7
®
500V 57A 0.075Ω
B2LL
R
MOSFET
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
T-MAX™
TO-264
LLL
• Increased Power Dissipation • Easier To Drive • Popular T-MAX™ or TO-264 Package
D G S
All Ratings: TC = 25°C unless otherwise specified.
APT50M75B2LL_LLL UNIT Volts Amps
500 57 228 ±30 ±40 570 4.56 -55 to 150 300 57 50
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/°C °C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
500 0.075 100 500 ±100 3 5
(VGS = 10V, ID = 28.5A)
Ohms µA nA Volts
9-2004 050-7000 Rev D
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT50M75B2LL_LLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 250V ID = 57A @ 25°C RESISTIVE SWITCHING VGS = 15V VDD = 250V ID = 57A @ 25°C RG = 0.6Ω 6 INDUCTIVE SWITCHING @ 25°C VDD = 333V, VGS = 15V ID = 57A, RG = 5Ω 6 INDUCTIVE SWITCHING @ 125°C VDD = 333V VGS = 15V ID = 57A, RG = 5Ω
MIN
TYP
MAX
UNIT
5590 1180 85 125 33 65 8 19 21 3 755 725 1240 845
MIN TYP MAX UNIT Amps Volts ns µC nC pF
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
ns
µJ
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD t rr Q rr
dv/ dt
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage
1 2
57 228 1.3 655 13.5 8
MIN TYP MAX
(Body Diode) (VGS = 0V, IS = - 57A)
Reverse Recovery Time (IS = -57A, dl S/dt = 100A/µs) Reverse Recovery Charge (IS = -57A, dlS /dt = 100A/µs) Peak Diode Recovery
d v/ 5 dt
V/ns
THERMAL CHARACTERISTICS
Symbol RθJC RθJA Characteristic Junction to Case Junction to Ambient UNIT °C/W
0.22 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 1.54mH, RG = 25Ω, Peak IL = 57A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID57A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.25
Z JC, THERMAL IMPEDANCE (°C/W) θ
0.2
0.9
0.7 0.15 0.5 0.1 0.3 0.05 0.1 0.05 0 10-5 10-4 Note:
PDM
9-2004
t1 t2
050-7000 Rev D
Peak TJ = PDM x ZθJC + TC
Duty Factor D = t1/t2
SINGLE PULSE 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0
Typical Performance Curves
ID, DRAIN CURRENT (AMPERES)
Junction temp. (°C) RC MODEL
120 100 80 60 40
APT50M75B2LL_LLL
15 &10V 8V 7.5V
0.0144
0.00575F
7V
Power (watts)
0.0763
0.0186F
6.5V
0.130 Case temperature. (°C)
0.278F
6V 20 5.5V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 0
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
160 140 120 100 80 60 40 20 0 TJ = +125°C TJ = +25°C TJ = -55°C
VDS> ID (ON) x RDS(ON) MAX. 250 µSEC. PULSE TEST @
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