APT50M80B2VR

APT50M80B2VR APT50M80LVR POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. T-MaxTM 500V 58A 0.080Ω TO-264 • Identical Specifications: T-MAX™ or TO-264 Package • Faster Switching • Lower Leakage • Avalanche Energy Rated G S D MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 All Ratings: TC = 25°C unless otherwise specified. APT50M80B2VR _ LVR UNIT Volts Amps 500 58 232 ±30 ±40 625 5.0 -55 to 150 300 58 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 3000 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 500 0.080 25 250 ±100 2 4 (VGS = 10V, 29A) Ohms µA nA Volts 12-2003 050-5916 Rev A Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT50M80B2VR_LVR Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 250V ID = 58A @ 25°C VGS = 15V VDD = 250V ID = 58A @ 25°C RG = 0.6Ω MIN TYP MAX UNIT 8797 1286 562 423 41 214 14 25 64 23 ns nC pF Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr Q rr Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage 1 2 MIN TYP MAX UNIT Amps Volts ns µC 58 232 1.3 680 17.0 (Body Diode) (VGS = 0V, IS = -58A) Reverse Recovery Time (IS = -58A, dl S/dt = 100A/µs) Reverse Recovery Charge (IS = -58A, dl S/dt = 100A/µs) THERMAL CHARACTERISTICS Symbol RθJC RθJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT °C/W 0.20 40 3 See MIL-STD-750 Method 3471 4 Starting T = +25°C, L = 1.78mH, R = 25Ω, Peak I = 58A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. 0.25 Z JC, THERMAL IMPEDANCE (°C/W) θ 0.20 0.9 0.15 0.7 0.5 12-2003 0.10 Note: PDM t1 t2 0.3 0.05 0.1 0.05 10-5 10-4 SINGLE PULSE 10-3 10-2 050-5916 Rev A Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 0 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves 160 ID, DRAIN CURRENT (AMPERES) Junction temp. (°C) RC MODEL APT50M80B2VR_LVR 15 &10V 7V 140 120 100 80 60 5V 40 4.5V 20 4V 0 5 10 15 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 0.0302 0.00809F 6V Power (watts) 5.5V 0.0729 0.0182F 0.0955 Case temperature. (°C) 0.264F 0 FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 100 90 ID, DRAIN CURRENT (AMPERES) VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @