APT55M65JFLL

APT55M65JFLL 550V 63A S G D 0.065Ω S POWER MOS 7 ® R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 SO 2 T- 27 "UL Recognized" ISOTOP ® • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package • FAST RECOVERY BODY DIODE APT55M65JFLL D G S All Ratings: TC = 25°C unless otherwise specified. UNIT Volts Amps 550 63 252 ±30 ±40 595 4.76 -55 to 150 300 63 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 3200 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 550 0.065 250 1000 ±100 3 5 (VGS = 10V, ID = 31.5A) Ohms µA nA Volts 7-2004 050-7227 Rev A Zero Gate Voltage Drain Current (VDS = 550V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 440V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD dv/ dt APT55M65JFLL Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 275V ID = 63A @ 25°C RESISTIVE SWITCHING VGS = 15V VDD = 275V ID = 63A @ 25°C 6 INDUCTIVE SWITCHING @ 25°C VDD = 367V, VGS = 15V INDUCTIVE SWITCHING @ 125°C VDD = 367V, VGS = 15V ID = 63A, RG = 5Ω ID = 63A, RG = 5Ω RG = 0.6Ω Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 MIN TYP MAX UNIT pF 9165 1700 80 205 55 105 23 16 55 10 1155 1510 1650 1500 MIN TYP MAX Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery 1 2 dt 6 nC ns µJ SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS UNIT Amps Volts V/ns ns µC Amps 63 256 1.3 15 Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C MIN (Body Diode) (VGS = 0V, IS = -63A) 5 d v/ t rr Q rr IRRM Reverse Recovery Time (IS = -63A, di/dt = 100A/µs) Reverse Recovery Charge (IS = -63A, di/dt = 100A/µs) Peak Recovery Current (IS = -63A, di/dt = 100A/µs) Characteristic Junction to Case Junction to Ambient 300 600 2.6 10 17 34 TYP MAX THERMAL CHARACTERISTICS Symbol RθJC RθJA UNIT °C/W 0.21 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.25 Z JC, THERMAL IMPEDANCE (°C/W) θ 4 Starting Tj = +25°C, L = 1.61mH, RG = 25Ω, Peak IL = 63A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ ID-63A di/dt ≤ 700A/µs VR ≤ 550V TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and inforation contained herein. 0.20 0.9 0.7 0.15 7-2004 0.10 0.5 0.3 Note: PDM t1 t2 050-7227 Rev A 0.05 0.1 0 0.05 10-5 10-4 10-3 10-2 10-1 SINGLE PULSE Peak TJ = PDM x ZθJC + TC Duty Factor D = t1/t2 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10 Typical Performance Curves ID, DRAIN CURRENT (AMPERES) Junction temp. (°C) RC MODEL 200 180 160 140 120 100 80 60 40 20 0 APT55M65JFLL VGS =15 & 10V 6.5V 6V 0.0492 0.0273F 5.5V Power (watts) 0.142 0.469F 5V 0.0189 Case temperature. (°C) 44.2F 4.5V 4V FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 180 160 ID, DRAIN CURRENT (AMPERES) 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40 V GS VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @