APT55M65L2FLL

APT55M65L2FLL 550V 78A 0.065Ω POWER MOS 7 ® R FREDFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 • Increased Power Dissipation • Easier To Drive • Popular TO-264 MAX Package • FAST RECOVERY BODY DIODE APT55M65L2FLL UNIT Volts Amps D G S All Ratings: TC = 25°C unless otherwise specified. 550 78 312 ±30 ±40 893 7.14 -55 to 150 300 78 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 3200 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 550 0.065 250 1000 ±100 3 5 (VGS = 10V, ID = 39A) Ohms µA nA Volts 7-2004 050-7225 Rev A Zero Gate Voltage Drain Current (VDS = 550V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 440V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD dv/ dt APT55M65L2FLL Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 275V ID = 78A @ 25°C RESISTIVE SWITCHING VGS = 15V VDD = 275V ID = 78A @ 25°C 6 INDUCTIVE SWITCHING @ 25°C VDD = 367V, VGS = 15V INDUCTIVE SWITCHING @ 125°C VDD = 367V, VGS = 15V ID = 78A, RG = 5Ω ID = 78A, RG = 5Ω RG = 0.6Ω Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 MIN TYP MAX UNIT pF 9165 1700 80 205 55 105 23 20 55 8 1425 1855 1975 2045 MIN TYP MAX Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery 1 2 dt 6 nC ns µJ SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS UNIT Amps Volts V/ns ns µC Amps 78 312 1.3 15 Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C MIN (Body Diode) (VGS = 0V, IS = -78A) 5 d v/ t rr Q rr IRRM Reverse Recovery Time (IS = -78A, di/dt = 100A/µs) Reverse Recovery Charge (IS = -78A, di/dt = 100A/µs) Peak Recovery Current (IS = -78A, di/dt = 100A/µs) Characteristic Junction to Case Junction to Ambient 300 600 2.6 10 17 34 TYP MAX THERMAL CHARACTERISTICS Symbol RθJC RθJA UNIT °C/W 0.14 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.16 Z JC, THERMAL IMPEDANCE (°C/W) θ 4 Starting Tj = +25°C, L = 1.05mH, RG = 25Ω, Peak IL = 78A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ ID-78A di/dt ≤ 700A/µs VR ≤ 550V TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and inforation contained herein. 0.14 0.9 0.12 0.10 0.08 0.06 0.04 0.02 0 10-5 0.3 0.7 0.5 7-2004 Note: PDM t1 t2 050-7225 Rev A 0.1 0.05 10-4 SINGLE PULSE Peak TJ = PDM x ZθJC + TC Duty Factor D = t1/t2 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves 200 180 ID, DRAIN CURRENT (AMPERES) APT55M65L2FLL VGS =15 & 10V 6.5V 6V 160 140 120 100 80 60 40 20 0 RC MODEL Junction temp. (°C) 0.0425 Power (watts) 0.0973 Case temperature. (°C) 0.528F 0.0291F 5.5V 5V 4.5V 4V FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 180 160 ID, DRAIN CURRENT (AMPERES) 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40 NORMALIZED TO = 10V @ 39A V GS VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @