APT55M85LFLL

APT55M85B2FLL APT55M85LFLL POWER MOS 7 ® 550V 59A 0.085Ω B2FLL R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 T-MAX™ TO-264 LFLL • Increased Power Dissipation • Easier To Drive • Popular T-MAX™ or TO-264 Package • FAST RECOVERY BODY DIODE D G S All Ratings: TC = 25°C unless otherwise specified. APT55M85 UNIT Volts Amps 550 59 236 ±30 ±40 694 5.56 -55 to 150 300 59 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 3000 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current 2 MIN TYP MAX UNIT Volts Amps 550 59 0.085 250 1000 ±100 3 5 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 29.5A) Ohms µA nA Volts 3-2003 050-7231 Rev A Zero Gate Voltage Drain Current (VDS = 550V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 440V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd t d(on) tr t d(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT55M85 B2FLL - LFLL Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 275V ID = 59A @ 25°C VGS = 15V VDD = 275V ID = 59A @ 25°C RG = 0.6Ω MIN TYP MAX UNIT pF 6590 1296 91 157 38 86 19 14 41 6 ns nC Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD dv/ dt Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery 1 2 dt MIN TYP MAX UNIT Amps Volts V/ns ns 59 236 1.3 15 Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C (Body Diode) (VGS = 0V, IS = -59A) 5 dv/ t rr Q rr IRRM Reverse Recovery Time (IS = -59A, di/dt = 100A/µs) Reverse Recovery Charge (IS = -59A, di/dt = 100A/µs) Peak Recovery Current (IS = -59A, di/dt = 100A/µs) 270 540 1.8 6.2 16 29 µC Amps THERMAL CHARACTERISTICS Symbol RθJC RθJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT °C/W 0.18 40 4 Starting Tj = +25°C, L = 1.72mH, RG = 25Ω, Peak IL = 59A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID59A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 APT Reserves the right to change, without notice, the specifications and information contained herein. 0.20 Z JC, THERMAL IMPEDANCE (°C/W) θ 0.16 0.9 0.7 0.12 0.5 0.8 0.3 t2 Note: PDM t1 3-2003 050-7231 Rev A 0.04 0.1 0.05 0 10-5 10-4 SINGLE PULSE Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves 160 RC MODEL Junction temp. ( ”C) 0.0396 0.0271F APT55M85 B2FLL - LFLL VGS=15 &10V ID, DRAIN CURRENT (AMPERES) 120 7.5V 7V Power (Watts) 0.0488 0.231F 80 6.5V 0.0924 Case temperature 0.653F 40 6V 5.5V 0 5V FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 140 120 100 80 60 40 20 0 0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS 60 TJ = +125°C TJ = +25°C TJ = -55°C VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @