APT6011B2VFR APT6011LVFR
600V 49A 0.110Ω
POWER MOS V® FREDFET
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
B2VFR
T-MAX™
TO-264
LVFR
• T-MAX™ or TO-264 Package • Faster Switching • Lower Leakage
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage
• Avalanche Energy Rated • FAST RECOVERY BODY DIODE
G S D
All Ratings: TC = 25°C unless otherwise specified.
APT6011B2VFR_LVFR UNIT Volts Amps
600 49 196 ±30 ±40 625 5.00 -55 to 150 300 49 50
4 1
Continuous Drain Current @ TC = 25°C Pulsed Drain Current
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/°C °C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
3000
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
600 0.110 250 1000 ±100 2 4
(VGS = 10V, ID = 24.5A)
Ohms µA nA Volts
5-2004 050-8061 Rev A
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT6011B2VFR_LVFR
Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 300V ID = 49A @ 25°C VGS = 15V VDD = 300V ID = 49A @ 25°C RG = 0.6Ω MIN TYP MAX UNIT
8900 1100 500 450 50 200 17 16 65 6
ns nC pF
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD
dv/ dt
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2 dt
MIN
TYP
MAX
UNIT Amps Volts V/ns ns µC Amps
49 196 1.3 15
Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C
(Body Diode) (VGS = 0V, IS = -49A)
5
d v/
t rr Q rr IRRM
Reverse Recovery Time (IS = -49A, di/dt = 100A/µs) Reverse Recovery Charge (IS = -49A, di/dt = 100A/µs) Peak Recovery Current (IS = -49A, di/dt = 100A/µs)
300 600 2.0 7.0 15 27
THERMAL CHARACTERISTICS
Symbol RθJC RθJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT °C/W
0.20 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 2.50mH, RG = 25Ω, Peak IL = 49A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID49A di/dt ≤ 700A/µs VR ≤600V TJ ≤ 150°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.25
Z JC, THERMAL IMPEDANCE (°C/W) θ
0.20
0.9
0.15
0.7 0.5 0.3 Note:
PDM t1 t2 Peak TJ = PDM x ZθJC + TC Duty Factor D = t1/t2
5-2004
0.10
050-8061 Rev A
0.05 0.1 0 0.05 10-5 10-4 SINGLE PULSE
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
ID, DRAIN CURRENT (AMPERES)
RC MODEL
120 VGS =15 &10 V 100 80 60
APT6011B2VFR_LVFR
6.5V 6V
Junction temp. (°C)
0.0302
0.00809F
5.5V
Power (watts)
0.0729
0.0182F
5V 40 20 0 4.5V
0.0955 Case temperature. (°C)
0.264F
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40
V NORMALIZED TO = 10V @ 24.5A
0
120 100 80 60 40 20 0
VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @
很抱歉,暂时无法提供与“APT6011B2VFR_04”相匹配的价格&库存,您可以联系我们找货
免费人工找货