APT6017B2FLL APT6017LFLL
POWER MOS 7
®
600V 35A 0.170Ω
B2FLL
R
FREDFET
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
T-MAX™
TO-264
LFLL
• Increased Power Dissipation • Easier To Drive • Popular T-MAX™ or TO-264 Package • FAST RECOVERY BODY DIODE
D G S
All Ratings: TC = 25°C unless otherwise specified.
APT6017B2FLL_LFLL UNIT Volts Amps
600 35 140 ±30 ±40 500 4.0 -55 to 150 300 35 35
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/°C °C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
1600
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
600 0.170 250 1000 ±100 3 5
(VGS = 10V, ID = 17.5A)
Ohms µA nA Volts
9-2004 050-7061 Rev C
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol C iss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD
dv/ dt
APT6017 B2FLL_LFLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 300V ID = 35A @ 25°C RESISTIVE SWITCHING VGS = 15V VDD = 300V ID = 35A @ 25°C RG = 0.6Ω 6 INDUCTIVE SWITCHING @ 25°C VDD = 400V, VGS = 15V ID = 35A, RG = 5Ω 6 INDUCTIVE SWITCHING @ 125°C VDD = 400V, VGS = 15V ID = 35A, RG = 5Ω
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
MIN
TYP
MAX
UNIT pF
4500 830 60 100 25 55 11 7 26 6 425 350 720 410
MIN TYP MAX
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2 dt
nC
ns
µJ
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT Amps Volts V/ns ns µC Amps
35 140 1.3 15
Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C MIN
(Body Diode) (VGS = 0V, IS = -35A)
5
d v/
t rr Q rr IRRM
Reverse Recovery Time (IS = -35A, di/dt = 100A/µs) Reverse Recovery Charge (IS = -35A, di/dt = 100A/µs) Peak Recovery Current (IS = -35A, di/dt = 100A/µs)
250 515 2.31 6.99 14.6 22.8
TYP MAX
THERMAL CHARACTERISTICS
Symbol RθJC RθJA Characteristic Junction to Case Junction to Ambient UNIT °C/W
0.25 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 2.61mH, RG = 25Ω, Peak IL = 35A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID35A di/dt ≤ 700A/µs VR ≤ 600V TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein. 0.30
Z JC, THERMAL IMPEDANCE (°C/W) θ
0.25 0.20 0.15 0.10 0.05 0
0.9 0.7 0.5 0.3 Note:
PDM t1 t2 Peak TJ = PDM x ZθJC + TC Duty Factor D = t1/t2
050-7061 Rev C
9-2004
0.1 0.05 10-5 10-4
SINGLE PULSE
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
Junction temp. (°C) RC MODEL
100 VGS =15 &10V 80 7.5V
APT6017 B2FLL_LFLL
8V
0.0230
0.0067F
ID, DRAIN CURRENT (AMPERES)
60
7V
Power (watts)
0.108
0.00995F
40
6.5V
0.111 Case temperature. (°C)
0.187F
20
6V 5.5V
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 160 140
ID, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @
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