APT6030BVFR APT6030SVFR
600V 21A 0.300Ω
POWER MOS V® FREDFET
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
BVFR
D3PAK
TO-247
SVFR
• Faster Switching • Lower Leakage
• Avalanche Energy Rated • FAST RECOVERY BODY DIODE
G S D
• TO-247 or Surface Mount D3PAK Package
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
All Ratings: TC = 25°C unless otherwise specified.
APT6030BVFR_SVFR UNIT Volts Amps
600 21 84 ±30 ±40 298 2.38 -55 to 150 300 21 30
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/°C °C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
1300
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
600 0.300 250 1000 ±100 2 4
(VGS = 10V, ID = 10.5A)
Ohms µA nA Volts
1-2005 050-5944 Rev A
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT6030BVFR_SVFR
Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 300V ID = 21A @ 25°C VGS = 15V VDD = 300V ID = 21A @ 25°C RG = 1.6Ω MIN TYP MAX UNIT
3750 430 160 150 18 60 12 10 47 8
ns nC pF
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD
dv/ dt
Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2 dt
MIN
TYP
MAX
UNIT Amps Volts V/ns ns µC Amps
21 84 1.3 15
Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C
(Body Diode) (VGS = 0V, IS = -21A)
5
d v/
t rr Q rr IRRM
Reverse Recovery Time (IS = -21A, di/dt = 100A/µs) Reverse Recovery Charge (IS = -21A, di/dt = 100A/µs) Peak Recovery Current (IS = -21A, di/dt = 100A/µs)
250 525 1.5 5.5 13 23
THERMAL CHARACTERISTICS
Symbol RθJC RθJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT °C/W
0.42 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 5.90mH, RG = 25Ω, Peak IL = 21A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID21A di/dt ≤ 700A/µs VR ≤600V TJ ≤ 150°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.5 D=0.5
Z JC, THERMAL IMPEDANCE (°C/W) θ
0.1 0.05
0.2 0.1 0.05
1-2005
PDM
0.01 0.005
0.02 0.01 SINGLE PULSE
Note:
t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC
050-5944 Rev A
0.001 10-5
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10-4
10
Typical Performance Curves
40
ID, DRAIN CURRENT (AMPERES)
VGS=5.5V, 6V, 10V & 15V
ID, DRAIN CURRENT (AMPERES)
40
APT6030BVFR_SVFR
VGS=6V, 10V & 15V 5.5V
32
5V
32
5V
24 4.5V
24
16
16
4.5V
8
4V
8
4V
0
0 50 100 150 200 250 300 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
0
0 4 8 12 16 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
NORMALIZED TO = 10V @ 0.5 I [Cont.]
D
40
ID, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @
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