APT60GF120JRDQ3

TYPICAL PERFORMANCE CURVES ® APT60GF120JRDQ3 1200V APT60GF120JRDQ3 FAST IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. • Low Forward Voltage Drop • RBSOA and SCSOA Rated • High Freq. Switching to 20KHz • Ultra Low Leakage Current E G C E S OT 22 7 ISOTOP ® "UL Recognized" file # E145592 • Ultrafast Soft Recovery Anti-parallel Diode C G E MAXIMUM RATINGS Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 100°C Pulsed Collector Current 1 All Ratings: TC = 25°C unless otherwise specified. APT60GF120JRDQ3 UNIT Volts 1200 ±30 149 79 300 300A @ 1200V 625 -55 to 150 Amps Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Watts STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 350µA) Gate Threshold Voltage (VCE = VGE, I C = 500µA, Tj = 25°C) MIN TYP MAX Units 1200 4.5 5.5 2.5 3.1 0.35 2 6.5 3.0 Collector-Emitter On Voltage (VGE = 15V, I C = 100A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 100A, Tj = 125°C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 2 Volts I CES I GES mA nA 4-2006 052-6287 Rev A Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) Gate-Emitter Leakage Current (VGE = ±20V) 3.0 ±100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) td(off) tf Eon1 Eon2 td(on) tr td(off) tf Eon1 Eon2 Eoff Eoff tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 APT60GF120JRDQ3 Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VCE = 600V I C = 100A TJ = 150°C, R G = 1.0Ω, VGE = Inductive Switching (25°C) VCC = 800V VGE = 15V RG = 1.0Ω I C = 100A VGE = 15V MIN TYP MAX UNIT pF V nC 7080 785 435 10.0 685 80 420 300 44 100 460 38 14.6 16.4 6.5 44 100 540 125 14.6 21.4 9.2 mJ ns ns A Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy 44 55 4 5 15V, L = 100µH,VCE = 1200V Turn-on Switching Energy (With Diode) 6 TJ = +25°C Inductive Switching (125°C) VCC = 800V VGE = 15V RG = 1.0Ω I C = 100A mJ Turn-on Switching Energy (With Diode) 6 TJ = +125°C THERMAL AND MECHANICAL CHARACTERISTICS Symbol RθJC RθJC VIsolation WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) RMS Voltage (50-60Hz Sinusoidal Package Weight Waveform from Terminals to Mounting Base for 1 Min.) MIN TYP MAX UNIT °C/W Volts 0.20 N/A 2500 1.03 29.2 10 1.1 oz gm Ib•in N•m Torque Maximum Terminal & Mounting Torque 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 4-2006 Rev A 052-6287 2 For Combi devices, Ices includes both IGBT and diode leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) APT Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES 180 160 IC, COLLECTOR CURRENT (A) 140 120 100 80 60 40 20 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 250µs PULSE TEST