APT60GU30S

TYPICAL PERFORMANCE CURVES APT60GU30B APT60GU30S ® APT60GU30B_S 300V POWER MOS 7 IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. TO-247 D3PAK C G E • Low Conduction Loss • Low Gate Charge • Ultrafast Tail Current shutoff MAXIMUM RATINGS Symbol VCES VGE VGEM IC1 IC2 ICM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient Continuous Collector Current @ • SSOA rated G C E C G E All Ratings: TC = 25°C unless otherwise specified. APT60GU30B_S UNIT 300 ±20 ±30 7 Volts TC = 25°C 100 60 200 200A @ 300V 417 -55 to 150 300 Watts °C Amps Continuous Collector Current @ TC = 100°C Pulsed Collector Current 1 @ TC = 150°C Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250µA) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C) MIN TYP MAX UNIT 300 3 4.5 1.5 1.5 250 µA nA 3-2004 050-7464 Rev A 6 2.0 Collector-Emitter On Voltage (VGE = 15V, I C = 30A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 30A, Tj = 125°C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C) 2 2 Volts I CES I GES Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C) Gate-Emitter Leakage Current (VGE = ±20V) 2500 ±100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Symbol RΘJC RΘJC WT Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 APT60GU30B_S Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 150V I C = 30A TJ = 150°C, R G = 5Ω, VGE = 15V, L = 100µH,VCE = 300V Inductive Switching (25°C) VCC = 200V VGE = 15V I C = 30A 4 5 MIN TYP MAX UNIT pF V nC A 2990 275 21 7.0 100 20 30 200 48 20 215 85 TBD 130 240 48 20 250 155 TBD 200 340 MIN TYP MAX UNIT °C/W gm ns ns Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight 4 5 R G = 20Ω TJ = +25°C Turn-on Switching Energy (Diode) 6 µJ Inductive Switching (125°C) VCC = 200V VGE = 15V I C = 30A R G = 20Ω TJ = +125°C Turn-on Switching Energy (Diode) 6 µJ THERMAL AND MECHANICAL CHARACTERISTICS 0.30 N/A 5.90 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. A Combi device is used for the clamping diode as shown in the Eon2 test circuit. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 Countinous current limited by package lead temperature. APT Reserves the right to change, without notice, the specifications and information contained herein. 050-7464 Rev A 3-2004 TYPICAL PERFORMANCE CURVES 60 50 40 30 20 10 0 TC=125°C TC=-55°C VGE = 15V. 250µs PULSE TEST