APT60M60JFLL

APT60M60JFLL 600V 70A 0.060Ω POWER MOS 7 ® R FREDFET G S D S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package • FAST RECOVERY BODY DIODE SO ISOTOP ® 2 T- 27 "UL Recognized" D G S MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 All Ratings: TC = 25°C unless otherwise specified. APT60M60JFLL UNIT Volts Amps 600 70 280 ±30 ±40 694 5.56 -55 to 150 300 70 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 3600 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 600 0.060 250 1000 ±100 3 5 (VGS = 10V, 35A) Ohms µA nA Volts 11-2003 050-7092 Rev A Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Ciss Coss C rss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD dv/ dt APT60M60JFLL Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 300V ID = 70A @ 25°C RESISTIVE SWITCHING VGS = 15V VDD = 300V ID = 70A @ 25°C RG = 0.6Ω 6 INDUCTIVE SWITCHING @ 25°C VDD = 400V, VGS = 15V ID = 70A, RG = 5Ω 6 INDUCTIVE SWITCHING @ 125°C VDD = 400V VGS = 15V ID = 70A, RG = 5Ω Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 MIN TYP MAX UNIT pF 12630 2202 157 289 74 146 21 16 51 12 1428 1386 2058 1691 MIN TYP MAX Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery 1 2 dt nC ns µJ SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS UNIT Amps Volts V/ns ns 70 280 1.3 15 Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C MIN (Body Diode) (VGS = 0V, IS = -70A) 5 d v/ t rr Reverse Recovery Time (IS = -70A, di/dt = 100A/µs) Reverse Recovery Charge (IS = -70A, di/dt = 100A/µs) Peak Recovery Current (IS = -70A, di/dt = 100A/µs) Characteristic Junction to Case Junction to Ambient 300 600 1.8 7.4 16 30 TYP MAX Q rr IRRM µC Amps THERMAL CHARACTERISTICS Symbol RθJC RθJA UNIT °C/W 0.18 40 4 Starting Tj = +25°C, L = 1.47mH, RG = 25Ω, Peak IL = 70A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -70A di/dt ≤ 700A/µs VR ≤ 600 TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.20 Z JC, THERMAL IMPEDANCE (°C/W) θ APT Reserves the right to change, without notice, the specifications and information contained herein. 0.16 0.9 0.7 0.12 0.5 0.08 0.3 0.04 0.1 0 0.05 10-5 10-4 10-3 SINGLE PULSE 10-2 10-1 Note: PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 050-7092 Rev A 11-2003 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10 Typical Performance Curves 200 ID, DRAIN CURRENT (AMPERES) Junction temp. (°C) RC MODEL APT60M60JFLL 180 160 140 5.5V 120 100 80 60 40 4.5V 20 4V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40 NORMALIZED TO V = 10V @ 35A GS VGS =15 & 10V 6.5V 6V 0.0244 0.0731F Power (watts) 0.133 0.701F 5V 0.0218 Case temperature. (°C) 20.1F 0 FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 250 ID, DRAIN CURRENT (AMPERES) VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @