APT60M80L2VR

APT60M80L2VR 600V 65A 0.080Ω POWER MOS V® MOSFET Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. V® L2VR TO-264 Max • TO-264 MAX Package • Faster Switching • Lower Leakage MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage • Avalanche Energy Rated G D S All Ratings: TC = 25°C unless otherwise specified. APT60M80L2VR UNIT Volts Amps 600 65 260 ±30 ±40 833 6.67 -55 to 150 300 65 50 4 1 Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 3200 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 600 0.080 25 250 (VGS = 10V, ID = 32.5A) Ohms µA 6-2004 050-5991 Rev B Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5mA) ±100 2 4 nA Volts CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT60M80L2VR Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 300V ID = 65A @ 25°C RESISTIVE SWITCHING VGS = 15V VDD = 300V ID = 65A @ 25°C RG = 0.6Ω 6 INDUCTIVE SWITCHING @ 25°C VDD = 400V, VGS = 15V ID = 65A, RG = 5Ω 6 INDUCTIVE SWITCHING @ 125°C VDD = 400V, VGS = 15V ID = 65A, RG = 5Ω MIN TYP MAX UNIT 13300 1610 700 590 50 310 14 24 70 31 1880 2830 3100 3345 µJ ns nC pF Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr rr dv/ dt Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage 1 2 MIN TYP MAX UNIT Amps Volts ns µC 65 260 1.3 937 29 8 (Body Diode) (VGS = 0V, IS = - ID65A) Reverse Recovery Time (IS = -ID65A, dl S/dt = 100A/µs) Reverse Recovery Charge (IS = -ID65A, dl S/dt = 100A/µs) Peak Diode Recovery d v/ dt 5 Q V/ns THERMAL CHARACTERISTICS Symbol RθJC RθJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT °C/W 0.15 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting Tj = +25°C, L = 1.51mH, RG = 25Ω, Peak IL = 65A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID65A di/dt ≤ 700A/µs VR ≤ 600V TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.16 Z JC, THERMAL IMPEDANCE (°C/W) θ 0.14 0.12 0.9 0.7 0.10 0.08 0.06 0.3 0.04 0.02 0 10-5 0.1 0.05 10-4 SINGLE PULSE 0.5 Note: PDM t1 t2 Peak TJ = PDM x ZθJC + TC Duty Factor D = t1/t2 050-5991 Rev B 6-2004 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves 180 160 ID, DRAIN CURRENT (AMPERES) APT60M80L2VR 6.5V 15 &10V 6V 140 120 100 80 60 40 20 0 RC MODEL Junction temp. (°C) 0.0456 Power (watts) 0.104 Case temperature. (°C) 0.493F 0.0272F 5.5V 5V 4.5V 4V RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 200 180 ID, DRAIN CURRENT (AMPERES) VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @