APT60N60BCSG

600V 60A 0.045Ω APT60N60BCS APT60N60SCS APT60N60BCSG* APT60N60SCSG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. C OLMOS O Power Semiconductors Super Junction MOSFET (B) TO -2 47 D3PAK • Ultra Low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated • Popular TO-247 or Surface Mount D3 Package (S) D G S MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL dv/ dt IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current 1 All Ratings: TC = 25°C unless otherwise specified. APT60N60B_SCS(G) 600 60 38 230 ±30 431 3.45 -55 to 150 260 50 11 2 3 UNIT Volts Amps Gate-Source Voltage Continuous Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. MOSFET dv/dt Ruggedness (VDS = 480V) Avalanche Current 2 Volts Watts W/°C °C V/ns Amps mJ Repetitive Avalanche Energy 3 1950 Single Pulse Avalanche Energy STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)DSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 4 MIN 600 TYP MAX UNIT Volts (VGS = 10V, ID = 44A) 0.045 25 250 ±100 2.1 3 3.9 Ohms µA nA Volts 3-2006 050-7239 Rev B Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TC = 150°C) Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 3mA) APT Website - http://www.advancedpower.com CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. "COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG." DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgd td(on) td(off) tf Eon Eoff Eon Eoff tr Qgs Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 5 APT60N60B_SCS(G) Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 400V ID = 44A @ 25°C RESISTIVE SWITCHING VGS = 15V VDD = 400V ID = 44A @ 25°C RG = 3.3Ω 6 MIN TYP MAX UNIT pF 7200 8500 290 150 34 50 30 20 100 10 675 520 1100 635 190 Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy 6 nC ns INDUCTIVE SWITCHING @ 25°C VDD = 400V, VGS = 15V ID = 44A, RG = 4.3Ω INDUCTIVE SWITCHING @ 125°C VDD = 400V, VGS = 15V ID = 44A, RG = 4.3Ω µJ SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr Q rr dv Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage 1 4 MIN TYP MAX UNIT Amps Volts ns µC 44 180 1.2 600 17 4 (Body Diode) (VGS = 0V, IS = - 44A) Reverse Recovery Time (IS = -44A, dl S/dt = 100A/µs) Reverse Recovery Charge (IS = -44A, dl S/dt = 100A/µs) Peak Diode Recovery dv/dt 7 /dt V/ns THERMAL CHARACTERISTICS Symbol RθJC RθJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT °C/W 0.29 62 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Repetitive avalanche causes additional power losses that can be calculated as PAV = EAR*f 3 Starting Tj = +25°C, L = 33.23mH, RG = 25Ω, Peak IL = 11A 4 Pulse Test: Pulse width < 380µs, Duty Cycle < 2% 5 See MIL-STD-750 Method 3471 6 Eon includes diode reverse recovery. See figures 18, 20. 7 We do not recommend using this CoolMOS™ product in topologies that have fee wheeling load current conducted in the body diode that is hard commutated. The current commutation is very "snappy", resulting in high di/dt at the completion of commutation, and the likelihood of severe over-voltage transients due to the resulting high dv/dt. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.30 Z JC, THERMAL IMPEDANCE (°C/W) θ D = 0.9 0.25 0.20 0.15 0.10 0.05 0 0.7 3-2006 0.5 Note: PDM 050-7239 Rev B 0.3 t1 t2 0.1 0.05 10-5 10-4 SINGLE PULSE Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC t 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Typical Performance Curves ID, DRAIN CURRENT (AMPERES) Junction temp. (°C) RC MODEL 140 120 100 80 60 40 20 0 6.5V 6V APT60N60B_SCS(G) 15, 10 & 7V 0.143 0.00717 Power (watts) 0.233 0.120 5.5V 0.00391 Case temperature. (°C) 0.680 5V 4.5V FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 200 180 0 5 10 15 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 1.40 1.30 1.20 1.10 1.00 0.90 0.80 VGS=10V NORMALIZED TO VGS = 10V @ 44A VDS> ID(ON) x RDS(ON) MAX. 250µSEC. PULSE TEST @