APT75GP120B2

APT75GP120B2 1200V POWER MOS 7 IGBT T-MaxTM ® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C • Low Conduction Loss • Low Gate Charge • Ultrafast Tail Current shutoff • 100 kHz operation @ 800V, 20A • 50 kHz operation @ 800V, 38A • RBSOA rated E C G E MAXIMUM RATINGS Symbol VCES VGE VGEM I C1 I C2 I CM RBSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 7 All Ratings: TC = 25°C unless otherwise specified. APT75GP120B2 UNIT 1200 ±20 ±30 100 91 300 300A @ 960V 1042 -55 to 150 300 Watts °C Amps Volts @ TC = 25°C Reverse Bias Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1000µA) Gate Threshold Voltage (VCE = VGE, I C = 2.5mA, Tj = 25°C) MIN TYP MAX UNIT 1200 3 4.5 3.3 3.0 1000 2 6 3.9 Volts Collector-Emitter On Voltage (VGE = 15V, I C = 75A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 75A, Tj = 125°C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 2 I CES I GES µA nA 5-2003 050-7424 Rev B Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) Gate-Emitter Leakage Current (VGE = ±20V) 5000 ±100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres VGEP Qg Qge Qgc RBSOA Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 APT75GP120B2 Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 600V I C = 75A TJ = 150°C, R G = 5Ω, VGE = 15V, L = 100µH,VCE = 960V Inductive Switching (25°C) VCC = 600V VGE = 15V I C = 75A 4 5 MIN TYP MAX UNIT 7035 460 80 7.5 320 50 140 300 20 40 163 56 1620 4100 2500 20 40 244 115 1620 5850 4820 MIN TYP MAX UNIT °C/W gm ns ns A nC V pF Gate-Emitter Charge Gate-Collector ("Miller ") Charge Reverse Bias Safe Operating Area td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Symbol RΘJC RΘJC WT Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy R G = 5Ω TJ = +25°C Turn-on Switching Energy (Diode) Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy 4 6 µJ Inductive Switching (125°C) VCC = 600V VGE = 15V I C = 75A R G = 5Ω 5 Turn-on Switching Energy (Diode) Turn-off Switching Energy 6 TJ = +125°C µJ THERMAL AND MECHANICAL CHARACTERISTICS Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight .12 N/A 5.90 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. A Combi device is used for the clamping diode as shown in the Eon2 test circuit. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 Continuous current limited by package lead temperature. APT Reserves the right to change, without notice, the specifications and information contained herein. 050-7424 Rev B 5-2003 TYPICAL PERFORMANCE CURVES 160 140 IC, COLLECTOR CURRENT (A) VGE = 15V. 250µs PULSE TEST