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APT75GT120JU3

APT75GT120JU3

  • 厂商:

    ADPOW

  • 封装:

  • 描述:

    APT75GT120JU3 - ISOTOP Buck chopper Trench IGBT - Advanced Power Technology

  • 数据手册
  • 价格&库存
APT75GT120JU3 数据手册
APT75GT120JU3 ISOTOP® Buck chopper Trench IGBT C VCES = 1200V IC = 75A @ Tc = 80°C Application · AC and DC motor control · Switched Mode Power Supplies Features · Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated · ISOTOP® Package (SOT-227) · Very low stray inductance · High level of integration Benefits · Low conduction losses · Stable temperature behavior · Very rugged · Direct mounting to heatsink (isolated package) · Low junction to case thermal resistance · Easy paralleling due to positive TC of VCEsat G E A E G C A ISOTOPÒ Absolute maximum ratings Symbol VCES IC1 IC2 ICM VGE PD IFAV IFRMS Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Maximum Average Forward Current Duty cycle=0.5 RMS Forward Current (Square wave, 50% duty) TC = 25°C TC = 80°C TC = 25°C TC = 25°C TC = 80°C Max ratings 1200 100 75 175 ±20 416 27 34 Unit V A V W A These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-7 APT75GT120JU3 – Rev 0 April, 2004 APT75GT120JU3 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES Zero Gate Voltage Collector Current VCE(on) VGE(th) IGES Collector Emitter on Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, IC = 5mA VGE = 0V, VCE = 1200V Tj = 25°C VGE =15V IC = 75A Tj = 125°C VGE = VCE, IC = 3mA VGE = ±20V, VCE = 0V Min 1200 Typ Max 5 2.1 6.5 500 Unit V mA V V nA 1.4 5.0 1.7 2.0 Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz Resistive Switching (25°C) VGE = 15V VBus = 600V IC = 75A RG = 4.7W Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 75A RG = 4.7W Min Typ 5340 280 240 260 30 420 70 290 45 520 90 7 9.5 Max Unit pF ns ns mJ APT website – http://www.advancedpower.com 2-7 APT75GT120JU3 – Rev 0 April, 2004 APT75GT120JU3 Diode ratings and characteristics Symbol VF IRM CT trr Reverse Recovery Time IRRM Qrr trr Qrr IRRM Maximum Reverse Recovery Current Reverse Recovery Charge Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 30A VR = 800V di/dt =1000A/µs IF = 30A VR = 800V di/dt =200A/µs Characteristic Diode Forward Voltage Maximum Reverse Leakage Current Junction Capacitance Reverse Recovery Time Test Conditions IF = 30A IF = 60A IF = 30A VR = 1200V VR = 1200V VR = 200V IF=1A,VR=30V di/dt =100A/µs Min Typ 2.0 2.3 1.8 32 Tj = 25°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 125°C 31 370 500 5 12 660 3450 220 4650 37 ns Max 2.5 250 500 Unit V µA pF Tj = 125°C Tj = 25°C Tj = 125°C A nC ns nC A Thermal and package characteristics Symbol Characteristic RthJC RthJA VISOL TJ,TSTG TL Torque Wt Junction to Case Junction to Ambient (IGBT & Diode) RMS Isolation Voltage, any terminal to case t =1 min, I isol
APT75GT120JU3 价格&库存

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