APT8011JLL

APT8011JLL 800V 51A 0.110Ω POWER MOS 7 ® R MOSFET G S D S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 SO ISOTOP ® 2 T- 27 "UL Recognized" D • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package G S All Ratings: TC = 25°C unless otherwise specified. APT8011JLL UNIT Volts Amps 800 51 204 ±30 ±40 694 5.56 -55 to 150 300 51 50 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 3600 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 800 0.110 100 500 ±100 3 5 (VGS = 10V, 25.5A) Ohms µA nA Volts 2-2004 050-7093 Rev A Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Ciss Coss C rss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT8011JLL Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 400V ID = 51A @ 25°C RESISTIVE SWITCHING VGS = 15V VDD = 400V ID = 51A @ 25°C RG = 0.6Ω 6 INDUCTIVE SWITCHING @ 25°C VDD = 533V, VGS = 15V ID = 51A, RG = 5Ω 6 INDUCTIVE SWITCHING @ 125°C VDD = 533V, VGS = 15V ID = 51A, RG = 5Ω MIN TYP MAX UNIT 9480 1890 340 650 100 525 23 23 83 19 1390 1545 2095 1800 µJ ns nC pF Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr rr dv/ dt Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage 1 2 MIN TYP MAX UNIT Amps Volts ns µC 51 204 1.3 1000 34 10 (Body Diode) (VGS = 0V, IS = - ID51A) Reverse Recovery Time (IS = -ID51A, dl S /dt = 100A/µs) Reverse Recovery Charge (IS = -ID51A, dl S/dt = 100A/µs) Peak Diode Recovery dv/ dt 5 Q V/ns THERMAL CHARACTERISTICS Symbol RθJC RθJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT °C/W 0.18 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting Tj = +25°C, L = 2.77mH, RG = 25Ω, Peak IL = 51A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID51A di/dt ≤ 700A/µs VR ≤ 800V TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.20 Z JC, THERMAL IMPEDANCE (°C/W) θ 0.16 0.9 0.7 0.12 0.5 0.08 0.3 0.04 0.1 0 0.05 10-5 10-4 SINGLE PULSE Note: PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 050-7093 Rev A 2-2004 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10 Typical Performance Curves 160 ID, DRAIN CURRENT (AMPERES) APT8011JLL 140 120 100 80 60 40 20 4V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40 V GS 6V VGS =15 & 10V 5.5V RC MODEL Junction temp. (°C) 0.0375 Power (watts) 0.142 Case temperature. (°C) 0.751F 0.0554F 5V 4.5V 0 FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 140 120 100 80 TJ = -55°C 60 40 20 0 TJ = +25°C TJ = +125°C VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @