APT8052BFLL_04

800V 15A APT8052BFLL APT8052SFLL BFLL 0.520Ω POWER MOS 7 ® R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 D3PAK TO-247 SFLL • Increased Power Dissipation • Easier To Drive • TO-247 or Surface Mount D3PAK Package • FAST RECOVERY BODY DIODE D G S All Ratings: TC = 25°C unless otherwise specified. APT8052BFLL_SFLL UNIT Volts Amps 800 15 60 ±30 ±40 298 2.38 -55 to 150 300 15 30 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 1210 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 800 0.520 250 1000 ±100 3 5 (VGS = 10V, ID = 7.5A) Ohms µA nA Volts 7-2004 050-7059 Rev B Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD dv/ dt APT8052BFLL_SFLL Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 400V ID = 15A @ 25°C RESISTIVE SWITCHING VGS = 15V VDD = 400V ID = 15A @ 25°C 6 INDUCTIVE SWITCHING @ 25°C VDD = 533V, VGS = 15V INDUCTIVE SWITCHING @ 125°C VDD = 533V VGS = 15V ID = 15A, RG = 5Ω ID = 15A, RG = 5Ω RG = 1.6Ω Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 MIN TYP MAX UNIT pF 2035 405 60 75 11 50 9 6 23 7 215 90 420 110 MIN TYP MAX Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery 1 2 6 nC ns µJ SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS UNIT Amps Volts V/ns ns µC Amps 15 60 1.3 18 Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C MIN (Body Diode) (VGS = 0V, IS = -15A) d v/ 5 dt t rr Q rr IRRM Reverse Recovery Time (IS = -15A, di/dt = 100A/µs) Reverse Recovery Charge (IS = -15A, di/dt = 100A/µs) Peak Recovery Current (IS = -15A, di/dt = 100A/µs) Characteristic Junction to Case Junction to Ambient 200 350 0.69 2.66 8 14 TYP MAX THERMAL CHARACTERISTICS Symbol RθJC RθJA UNIT °C/W 0.42 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.45 Z JC, THERMAL IMPEDANCE (°C/W) θ 4 Starting Tj = +25°C, L = 10.76mH, RG = 25Ω, Peak IL = 15A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID15A di/dt ≤ 700A/µs VR ≤ 800 TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 10-5 0.9 0.7 0.5 Note: PDM 7-2004 0.3 SINGLE PULSE 0.1 0.05 10-4 10-3 10-2 t1 t2 050-7059 Rev B Peak TJ = PDM x ZθJC + TC Duty Factor D = t1/t2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves 40 35 30 25 20 15 10 5 0 5.5V 5V 7V 6.5V VGS =15 &10 V APT8052BFLL_SFLL 8V RC MODEL Junction temp. (°C) 0.164 Power (watts) 0.257 Case temperature. (°C) 0.125F 0.00592F ID, DRAIN CURRENT (AMPERES) 6V RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 40 35 ID, DRAIN CURRENT (AMPERES) VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @