APT8052BLL

800V 15A APT8052BLL APT8052SLL BLL 0.520Ω POWER MOS 7 ® R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 D3PAK TO-247 SLL • Increased Power Dissipation • Easier To Drive • TO-247 or Surface Mount D3PAK Package D G S All Ratings: TC = 25°C unless otherwise specified. APT8052BLL_SLL UNIT Volts Amps 800 15 60 ±30 ±40 298 2.38 -55 to 150 300 15 30 4 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 Volts Watts W/°C °C Amps mJ (Repetitive and Non-Repetitive) 1 Repetitive Avalanche Energy Single Pulse Avalanche Energy 1210 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 MIN TYP MAX UNIT Volts 800 0.52 100 500 ±100 3 5 (VGS = 10V, ID = 7.5A) Ohms µA nA Volts 6-2004 050-7058 Rev B Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT8052BLL_SLL Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 400V ID = 15A @ 25°C RESISTIVE SWITCHING VGS = 15V VDD = 400V ID = 15A @ 25°C RG = 1.6Ω 6 INDUCTIVE SWITCHING @ 25°C VDD = 533V, VGS = 15V ID = 15A, RG = 5Ω 6 INDUCTIVE SWITCHING @ 125°C VDD = 533V, VGS = 15V ID = 15A, RG = 5Ω MIN TYP MAX UNIT 2035 405 60 75 11 50 9 6 23 7 215 90 420 110 MIN TYP MAX UNIT Amps Volts ns µC nC pF Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy ns µJ SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD t rr rr dv/ dt Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage 1 2 15 60 1.3 650 9.0 10 MIN TYP MAX (Body Diode) (VGS = 0V, IS = - 15A) Reverse Recovery Time (IS = -15A, dl S/dt = 100A/µs) Reverse Recovery Charge (IS = -15A, dl S/dt = 100A/µs) Peak Diode Recovery d v/ dt 5 Q V/ns THERMAL CHARACTERISTICS Symbol RθJC RθJA Characteristic Junction to Case Junction to Ambient UNIT °C/W 0.45 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting Tj = +25°C, L = 10.76mH, RG = 25Ω, Peak IL = 15A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID15A di/dt ≤ 700A/µs VR ≤ 800 TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.45 Z JC, THERMAL IMPEDANCE (°C/W) θ 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 10-5 0.9 0.7 0.5 Note: PDM 6-2004 0.3 SINGLE PULSE 0.1 0.05 10-4 10-3 10-2 t1 t2 050-7058 Rev B Peak TJ = PDM x ZθJC + TC Duty Factor D = t1/t2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves 40 35 30 25 20 15 10 5 0 5.5V 5V 7V 6.5V VGS =15 &10 V APT8052BLL_SLL 8V RC MODEL Junction temp. (°C) 0.164 Power (watts) 0.257 Case temperature. (°C) 0.125F 0.00592F ID, DRAIN CURRENT (AMPERES) 6V RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 40 35 30 25 20 15 10 5 0 TJ = +125°C TJ = -55°C TJ = +25°C 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @