APT80GP60B2

APT80GP60B2 600V POWER MOS 7 IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. T-MaxTM ® • Low Conduction Loss • Low Gate Charge • Ultrafast Tail Current shutoff • 200 kHz operation @ 400V, 45A • 100 kHz operation @ 400V, 72A • SSOA rated G C E C G E MAXIMUM RATINGS Symbol VCES VGE VGEM I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient Continuous Collector Current Continuous Collector Current Pulsed Collector Current 1 7 7 All Ratings: TC = 25°C unless otherwise specified. APT80GP60B2 UNIT 600 ±20 ±30 @ TC = 25°C @ TC = 110°C Volts 100 100 330 330A @ 600V 1041 -55 to 150 300 Watts °C Amps @ TC = 25°C Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1.0mA) Gate Threshold Voltage (VCE = VGE, I C = 2.5mA, Tj = 25°C) MIN TYP MAX UNIT 600 3 4.5 2.2 2.1 1.0 2 6 2.7 Volts Collector-Emitter On Voltage (VGE = 15V, I C = 80A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 80A, Tj = 125°C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2 I CES I GES mA nA 10-2003 050-7425 Rev B Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) Gate-Emitter Leakage Current (VGE = ±20V) 5 ±100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 APT80GP60B2 Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 300V I C = 80A TJ = 150°C, R G = 5Ω, VGE = 15V, L = 100µH,VCE = 600V Inductive Switching (25°C) VCC = 400V VGE = 15V I C = 80A 4 5 MIN TYP MAX UNIT 9840 735 40 7.5 280 65 85 330 29 40 116 78 795 1536 1199 29 40 149 84 795 2153 1690 µJ ns µJ ns A nC V pF Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-on Switching Energy (Diode) Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy 4 5 6 R G = 5Ω TJ = +25°C Inductive Switching (125°C) VCC = 400V VGE = 15V I C = 80A R G = 5Ω TJ = +125°C Turn-on Switching Energy (Diode) Turn-off Switching Energy 6 THERMAL AND MECHANICAL CHARACTERISTICS Symbol RΘJC RΘJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT °C/W gm .12 N/A 5.9 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. A Combi device is used for the clamping diode as shown in the Eon2 test circuit. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 Countinous current limited by package lead temperature. APT Reserves the right to change, without notice, the specifications and information contained herein. 050-7425 Rev B 10-2003 TYPICAL PERFORMANCE CURVES 120 VGE = 15V. 250µs PULSE TEST