APT83GU30B

APT83GU30B APT83GU30S 300V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. D3PAK C G G E C • Low Conduction Loss • Low Gate Charge • Ultrafast Tail Current shutoff MAXIMUM RATINGS Symbol VCES VGE VGEM IC1 IC2 ICM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient Continuous Collector Current @ • SSOA rated E C G E All Ratings: TC = 25°C unless otherwise specified. APT83GU30B_S UNIT 300 ±20 ±30 7 Volts TC = 25°C 100 83 295 295A @ 300V 543 -55 to 150 300 Watts °C Amps Continuous Collector Current @ TC = 100°C Pulsed Collector Current 1 @ TC = 150°C Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250µA) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25°C) MIN TYP MAX UNIT 300 3 4.5 1.5 1.5 250 µA nA 2-2004 050-7465 Rev A 6 2.0 Volts Collector-Emitter On Voltage (VGE = 15V, I C = 45A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 45A, Tj = 125°C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C) 2 2 I CES I GES Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C) Gate-Emitter Leakage Current (VGE = ±20V) 2500 ±100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 APT83GU30B_S Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 150V I C = 45A TJ = 150°C, R G = 5Ω, VGE = 15V, L = 100µH,VCE = 300V Inductive Switching (25°C) VCC = 200V VGE = 15V I C = 45A 4 5 MIN TYP MAX UNIT 4385 406 31 7.0 144 29 44 295 69 29 308 122 TBD 189 354 69 29 355 226 TBD 287 503 MIN TYP MAX UNIT °C/W gm ns ns A nC V pF Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Symbol RΘJC RΘJC WT Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-on Switching Energy (Diode) Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy 4 5 6 R G = 20Ω TJ = +25°C µJ Inductive Switching (125°C) VCC = 200V VGE = 15V I C = 45A R G = 20Ω TJ = +125°C Turn-on Switching Energy (Diode) Turn-off Switching Energy 6 µJ THERMAL AND MECHANICAL CHARACTERISTICS Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight 0.23 N/A 5.90 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. A Combi device is used for the clamping diode as shown in the Eon2 test circuit. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 Countinous current limited by package lead temperature. APT Reserves the right to change, without notice, the specifications and information contained herein. 050-7465 Rev A 2-2004 TYPICAL PERFORMANCE CURVES 60 VGE = 15V. 250µs PULSE TEST