APTC60AM18SC

APTC60AM18SC Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module VDSS = 600V RDSon = 18mW max @ Tj = 25°C ID = 143A @ Tc = 25°C Application · Motor control · Switched Mode Power Supplies · Uninterruptible Power Supplies Features · · Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile · · G1 S1 VBUS 0/VBUS O UT · Benefits S2 G2 · · · · Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Max ratings 600 143 107 572 ±30 18 833 20 1 1800 Unit V A V mW W A mJ Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–7 APTC60AM18SC – Rev 1 May, 2004 APTC60AM18SC All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V, ID = 1000µA VGS = 0V,VDS = 600V Tj = 25°C VGS = 0V,VDS = 600V Tj = 125°C VGS = 10V, ID = 71.5A VGS = VDS, ID = 4mA VGS = ±20 V, VDS = 0V Min 600 Typ Max 100 1000 18 3.9 ±200 Unit V µA mW V nA 2.1 3 Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy u Turn-on Switching Energy Turn-off Switching Energy u Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 300V ID = 143A Inductive switching @ 125°C VGS = 15V VBus = 400V ID = 143A RG = 1.2W Inductive switching @ 25°C VGS = 15V, VBus = 400V ID = 143A, RG = 1.2Ω Inductive switching @ 125°C VGS = 15V, VBus = 400V ID = 143A, RG = 1.2Ω Min Typ 28 10.2 0.85 1036 116 444 21 30 283 84 1608 3920 2630 4824 µJ ns nC Max Unit nF µJ u In accordance with JEDEC standard JESD24-1. Series diode ratings and characteristics Symbol Characteristic Maximum Average Forward Current IF(AV) VF Diode Forward Voltage Test Conditions 50% duty cycle IF = 120A IF = 240A IF = 120A IF = 120A VR = 133V di/dt = 400A/µs IF = 120A VR = 133V di/dt = 400A/µs Min Tc = 85°C Typ 120 1.1 1.4 0.9 31 60 120 500 Max 1.15 V APTC60AM18SC – Rev 1 May, 2004 Unit A Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C trr Qrr Reverse Recovery Time Reverse Recovery Charge ns nC APT website – http://www.advancedpower.com 2–7 APTC60AM18SC Parallel diode ratings and characteristics Symbol Characteristic Maximum Average Forward Current IF(AV) VF QC Q Diode Forward Voltage Total Capacitive Charge Total Capacitance Test Conditions 50% duty cycle Min Tc = 125°C Tj = 25°C Tj = 175°C IF = 80A Typ 80 1.6 2.0 112 520 400 Max 1.8 2.4 Unit A V nC pF IF = 80A, VR = 300V di/dt =2000A/µs f = 1MHz, VR = 200V f = 1MHz, VR = 400V Min Transistor Series diode Parallel diode 2500 -40 -40 -40 3 2 Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Typ Max 0.15 0.46 0.35 150 125 100 5 3.5 280 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 6.5V 6V 5.5V ID, Drain Current (A) VGS=15&10V 450 360 270 180 90 0 TJ=125°C TJ=25°C 0 TJ=-55°C 7 25 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) RDS(on) Drain to Source ON Resistance DC Drain Current vs Case Temperature 160 140 120 100 80 60 40 20 0 25 50 75 100 125 TC, Case Temperature (°C) 150 APTC60AM18SC – Rev 1 May, 2004 VGS=10V VGS=20V APT website – http://www.advancedpower.com 4–7 APTC60AM18SC RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 100000 Ciss C, Capacitance (pF) 10000 Coss 1000 ID, Drain Current (A) limited by RDSon ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area VGS=10V ID= 143A 100 µs 100 1 ms 10 Single pulse DC line TJ=150°C 1 1 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 10 ms VGS, Gate to Source Voltage (V) 14 12 10 8 6 4 2 0 0 200 400 600 800 Gate Charge (nC) 1000 1200 ID=143A TJ=25°C VDS=120V VDS=300V VDS=480V 1000 Crss 100 10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) APT website – http://www.advancedpower.com 5–7 APTC60AM18SC – Rev 1 May, 2004 APTC60AM18SC 350 300 td(on) and td(off) (ns) Delay Times vs Current 120 Rise and Fall times vs Current VDS=400V RG=1.2Ω TJ=125°C L=100µH td(off) VDS=400V RG=1.2Ω TJ=125°C L=100µH 100 tr and tf (ns) 80 60 40 20 250 200 150 100 50 0 0 40 80 120 160 200 240 ID, Drain Current (A) Switching Energy vs Current 10 9 8 7 6 5 4 3 2 1 0 0 VDS=400V RG=1.2Ω TJ=125°C L=100µH tf tr td(on) 0 0 40 80 120 160 200 240 ID, Drain Current (A) Switching Energy vs Gate Resistance 20 Switching Energy (mJ) VDS=400V ID=143A TJ=125°C L=100µH Switching Energy (mJ) Eoff 15 Eoff 10 Eon Eon 5 0 40 80 120 160 200 ID, Drain Current (A) 240 0 2.5 5 7.5 10 12.5 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000 TJ=150°C 100 Operating Frequency vs Drain Current 120 Frequency (kHz) 100 80 60 40 20 0 30 50 70 90 110 ID, Drain Current (A) 130 VDS=400V D=50% RG=1.2Ω TJ=125°C IDR, Reverse Drain Current (A) 140 TJ=25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) APTC60AM18SC – Rev 1 May, 2004 APT website – http://www.advancedpower.com 6–7 APTC60AM18SC Typical SiC Diode Performance Curve M aximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.4 Thermal Impedance (°C/W) 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 0.9 0 0.00001 Rectangular Pulse Duration (Seconds) Forward Characteristics Reverse Characteristics 1600 IR Reverse Current (µA) 1400 1200 1000 800 600 400 200 0 200 300 400 500 600 700 VR Reverse Voltage (V) 800 TJ=25°C TJ=125°C TJ=75°C TJ=175°C 160 IF Forward Current (A) TJ=25°C TJ=75°C 120 80 40 0 0 0.5 TJ=175°C TJ=125°C 1 1.5 2 2.5 3 3.5 VF Forward Voltage (V) Capacitance vs.Reverse Voltage 3000 C, Capacitance (pF) 2500 2000 1500 1000 500 0 1 10 100 VR Reverse Voltage 1000 APTC60AM18SC – Rev 1 May, 2004 “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 7–7