APTC60AM35SCT

APTC60AM35SCT Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module NTC2 VBUS Q1 VDSS = 600V RDSon = 35mW max @ Tj = 25°C ID = 72A @ Tc = 25°C Application · Motor control · Switched Mode Power Supplies · Uninterruptible Power Supplies Features · G1 OUT S1 Q2 · Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated G2 0/VBU S S2 NTC1 Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration · · · · OUT VBUS OUT 0/VBUS S1 G1 S2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Benefits · Outstanding performance at high frequency operation · Direct mounting to heatsink (isolated package) · Low junction to case thermal resistance · Solderable terminals both for power and signal for easy PCB mounting · Low profile Max ratings 600 72 54 288 ±30 35 416 20 1 1800 Unit V A APTC60AM35SCT – Rev 1 May, 2004 Tc = 25°C Tc = 80°C Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C V mW W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–7 APTC60AM35SCT All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V, ID = 500µA VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V Min 600 Tj = 25°C Tj = 125°C 2.1 Typ Max 50 500 35 3.9 ±150 Unit V µA mW V nA VGS = 10V, ID = 36A VGS = VDS, ID = 2mA VGS = ±20 V, VDS = 0V 3 Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy u Turn-on Switching Energy Turn-off Switching Energy u Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 300V ID = 72A Inductive switching @ 125°C VGS = 15V VBus = 400V ID = 72A RG = 2.5W Inductive switching @ 25°C VGS = 15V, VBus = 400V ID = 72A, RG = 2.5Ω Inductive switching @ 125°C VGS = 15V, VBus = 400V ID = 72A, RG = 2.5Ω Min Typ 14 5.13 0.42 518 58 222 21 30 283 84 804 1960 1315 2412 µJ ns nC Max Unit nF µJ u In accordance with JEDEC standard JESD24-1. Series diode ratings and characteristics Symbol Characteristic Maximum Average Forward Current IF(AV) VF Diode Forward Voltage Test Conditions 50% duty cycle IF = 60A IF = 120A IF = 60A IF = 60A VR = 133V di/dt = 400A/µs IF = 60A VR = 133V di/dt = 400A/µs Min Tc = 85°C Typ 60 1.1 1.4 0.9 24 48 66 300 Max 1.15 V APTC60AM35SCT – Rev 1 May, 2004 Unit A Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C trr Qrr Reverse Recovery Time Reverse Recovery Charge ns nC APT website – http://www.advancedpower.com 2–7 APTC60AM35SCT Parallel diode ratings and characteristics Symbol Characteristic Maximum Average Forward Current IF(AV) VF QC Q Diode Forward Voltage Total Capacitive Charge Total Capacitance Test Conditions 50% duty cycle Min Tc = 125°C Tj = 25°C Tj = 175°C IF = 40A Typ 40 1.6 2.0 56 260 200 Max 1.8 2.4 Unit A V nC pF IF = 40A, VR = 300V di/dt =1200A/µs f = 1MHz, VR = 200V f = 1MHz, VR = 400V Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Transistor Series diode 2500 -40 -40 -40 Min Typ Max 0.3 0.65 0.8 150 125 100 4.7 160 Typ 68 4080 Max Unit °C/W Parallel diode RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle ID, Drain Current (A) ID, Drain Current (A) VGS=15&10V RDS(on) Drain to Source ON Resistance DC Drain Current vs Case Temperature 80 70 60 50 40 30 20 10 0 25 50 75 100 125 TC, Case Temperature (°C) 150 APTC60AM35SCT – Rev 1 May, 2004 VGS=10V VGS=20V APT website – http://www.advancedpower.com 4–7 APTC60AM35SCT RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 100000 Ciss C, Capacitance (pF) 10000 Coss 1000 ID, Drain Current (A) limited by RDSon ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area VGS=10V ID= 72A 100 100 µs 10 DC line 1 Single pulse TJ=150°C 1 10 100 1 ms 10 ms 0.1 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 14 12 10 8 6 4 2 0 0 100 200 300 400 Gate Charge (nC) 500 600 ID=72A TJ=25°C VDS=120V VDS=300V VDS=480V 1000 Crss 100 10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) APT website – http://www.advancedpower.com 5–7 APTC60AM35SCT – Rev 1 May, 2004 APTC60AM35SCT 350 300 td(on) and td(off) (ns) Delay Times vs Current 120 Rise and Fall times vs Current VDS=400V RG=2.5Ω TJ=125°C L=100µH td(off) VDS=400V RG=2.5Ω TJ=125°C L=100µH 100 tr and tf (ns) 80 60 40 20 250 200 150 100 50 0 0 20 40 60 80 100 120 ID, Drain Current (A) Switching Energy vs Current 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 VDS=400V RG=2.5Ω TJ=125°C L=100µH tf tr td(on) 0 0 20 40 60 80 100 120 ID, Drain Current (A) Switching Energy vs Gate Resistance 10 Switching Energy (mJ) 8 6 4 Eon 2 0 VDS=400V ID=72A TJ=125°C L=100µH Switching Energy (mJ) Eoff Eoff Eon 20 40 60 80 100 ID, Drain Current (A) 120 0 5 10 15 20 25 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000 TJ=150°C 100 TJ=25°C 10 Operating Frequency vs Drain Current 120 Frequency (kHz) 100 80 60 40 20 0 15 20 25 30 35 40 45 50 55 60 65 ID, Drain Current (A) VDS=400V D=50% RG=2.5Ω TJ=125°C IDR, Reverse Drain Current (A) 140 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) APTC60AM35SCT – Rev 1 May, 2004 APT website – http://www.advancedpower.com 6–7 APTC60AM35SCT Typical SiC Diode Performance Curve M aximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 Thermal Impedance (°C/W) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 0.9 0 0.00001 Rectangular Pulse Duration (Seconds) Forward Characteristics Reverse Characteristics 800 IR Reverse Current (µA) 700 600 500 400 300 200 100 0 200 300 400 500 600 700 VR Reverse Voltage (V) 800 TJ=25°C TJ=125°C TJ=75°C TJ=175°C 80 IF Forward Current (A) TJ=25°C TJ=75°C 60 40 20 0 0 0.5 TJ=175°C TJ=125°C 1 1.5 2 2.5 3 3.5 VF Forward Voltage (V) Capacitance vs.Reverse Voltage 1600 1400 C, Capacitance (pF) 1200 1000 800 600 400 200 0 1 APTC60AM35SCT – Rev 1 May, 2004 10 100 VR Reverse Voltage 1000 “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 7–7