APTC60DDAM70T3

APTC60DDAM70T3 Dual boost chopper Super Junction MOSFET VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C ID = 39A @ Tc = 25°C Applicatio n • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Q2 4 Power Module 13 14 CR1 22 7 CR2 23 Q1 26 8 27 29 15 30 31 R1 32 16 3 • • • • - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Each leg can be easily paralleled to achieve a single boost of twice the current capability All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-6 APTC60DDAM70T3 – Rev 0 September, 2004 Max ratings 600 39 29 120 ±20 70 250 20 1 1800 Unit V A APTC60DDAM70T3 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol B VDSS IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min 600 Tj = 25°C Tj = 125°C 2.1 0.5 25 250 70 3.9 ±100 Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current VGS = 0 V, ID = 250µA VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V Typ Max Unit V µA mΩ V nA VGS = 10V, ID = 39A VGS = VDS, ID = 2.7mA VGS = ±20 V, VDS = 0 V 3 Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 300V ID = 39A Inductive Switching @ 125°C VGS = 15V VBus = 400V ID = 39A R G = 5Ω Inductive switching @ 25°C VGS = 15V, VBus = 400V ID = 39A, R G = 5 Ω Inductive switching @ 125°C VGS = 15V, VBus = 400V ID = 39A, R G = 5 Ω Min Typ 7 2.56 0.21 259 29 111 21 30 283 84 670 980 1096 1206 Max Unit nF nC ns µJ µJ Diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF(A V) VF Maximum Reverse Leakage Current Maximum Average Forward Current Diode Forward Voltage Test Conditions VR=600V 50% duty cycle Min 600 Tj = 25°C Tj = 125°C Tc = 70°C Typ Max 250 750 Unit V µA A Tj = 150°C Tj = 25°C Tj = 100°C Tj = 25°C Tj = 100°C trr Qrr Reverse Recovery Time Reverse Recovery Charge 74 74 123 288 IF = 30A VR = 400V di/dt=200A/µs ns nC Eon includes diode reverse recovery. In accordance with JEDEC standard JESD24-1. APT website – http://www.advancedpower.com 2-6 APTC60DDAM70T3 – Rev 0 September, 2004 IF = 30A IF = 60A IF = 30A 30 2.2 2.7 1.5 2.7 V APTC60DDAM70T3 Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 Min Typ Max 0.5 1.2 150 125 100 4.7 110 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS (on)MAX 250µs pulse test @ < 0.5 duty cycle 160 120 80 VGS=15&10V RDS(on) Drain to Source ON Resistance 1.1 1.05 1 0.95 0.9 0 DC Drain Current vs Case Temperature 45 VGS=10V 40 35 30 25 20 15 10 5 25 50 75 100 125 TC, Case Temperature (°C) 150 APTC60DDAM70T3 – Rev 0 September, 2004 VGS =20V 0 10 20 30 40 50 60 I D, Drain Current (A) APT website – http://www.advancedpower.com 4-6 APTC60DDAM70T3 RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area V GS=10V ID= 39A Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) 1000 I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 100 10 1 0.1 1 limited by RDSon 100 µs 1 ms DC line 10 ms Single pulse TJ =150°C 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS , Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) 14 12 10 8 6 4 2 0 0 50 APTC60DDAM70T3 – Rev 0 September, 2004 10000 Ciss Coss ID=39A TJ=25°C V DS=120V VDS=300V V DS =480V 1000 Crss 100 10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) 100 150 200 Gate Charge (nC) 250 300 APT website – http://www.advancedpower.com 5-6 APTC60DDAM70T3 350 300 td(on) and td(off) (ns) Delay Times vs Current 120 td(off) VDS=400V RG=5Ω TJ=125°C L=100µH Rise and Fall times vs Current VDS=400V RG=5Ω T J=125°C L=100µH 100 tr and t f (ns) 250 200 150 100 50 0 0 10 20 30 40 50 60 70 ID, Drain Current (A) Switching Energy vs Current 2.5 Switching Energy (mJ) VDS=400V RG=5Ω TJ=125°C L=100µH tf 80 60 40 20 0 0 td(on) tr 10 20 30 40 50 60 70 ID, Drain Current (A) Switching Energy vs Gate Resistance 5 4 3 2 1 0 V DS =400V ID=39A T J=125°C L=100µH Switching Energy (mJ) 2 1.5 Eoff Eon Eoff 1 0.5 0 0 10 20 30 40 50 60 ID, Drain Current (A) 70 Eon 0 5 10 15 20 25 30 35 40 45 50 Gate Resistance (Ohms) Operating Frequency vs Drain Current 140 Frequency (kHz) I DR, Reverse Drain Current (A) 160 Source to Drain Diode Forward Voltage 1000 120 100 80 60 40 20 0 5 V DS =400V D=50% RG =5Ω T J=125°C T C=75°C hard switching ZCS ZVS 100 TJ=150°C 10 TJ =25°C 1 0.3 APTC60DDAM70T3 – Rev 0 September, 2004 10 15 20 25 30 ID, Drain Current (A) 35 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6-6