APTC60HM70T3

APTC60HM70T3 Full - Bridge Super Junction MOSFET VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C ID = 39A @ Tc = 25°C Applicatio n • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies 11 22 19 Q2 23 8 Q4 7 10 Power Module 13 14 Q1 Q3 18 Features • - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration 26 4 3 29 15 30 31 R1 32 16 27 • • • • 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Each leg can be easily paralleled to achieve a phase leg of twice the current capability All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-6 APTC60HM70T3 – Rev 0 September, 2004 Max ratings 600 39 29 120 ±20 70 250 20 1 1800 Unit V A APTC60HM70T3 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol B VDSS IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min 600 Tj = 25°C Tj = 125°C 2.1 0.5 25 250 70 3.9 ±100 Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current VGS = 0 V, ID = 250µA VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V Typ Max Unit V µA mΩ V nA VGS = 10V, ID = 39A VGS = VDS, ID = 2.7mA VGS = ±20 V, VDS = 0 V 3 Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 300V ID = 39A Inductive Switching @ 125°C VGS = 15V VBus = 400V ID = 39A R G = 5Ω Inductive switching @ 25°C VGS = 15V, VBus = 400V ID = 39A, R G = 5 Ω Inductive switching @ 125°C VGS = 15V, VBus = 400V ID = 39A, R G = 5 Ω Min Typ 7 2.56 0.21 259 29 111 21 30 283 84 670 980 1096 1206 Max Unit nF nC ns µJ µJ Source - Drain diode ratings and characteristics Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge Test Conditions Tc = 25°C Tc = 80°C Min Typ 39 29 Max Unit A VGS = 0 V, IS = - 39A IS = - 39A VR = 350V diS/dt = 100A/µs Tj = 25°C Tj = 25°C 580 23 1.2 6 V V/ns ns µC APTC60HM70T3 – Rev 0 September, 2004 Eon includes diode reverse recovery. In accordance with JEDEC standard JESD24-1. dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 39A di/dt ≤ 100A/µs VR ≤ VDSS Tj ≤ 150°C APT website – http://www.advancedpower.com 2-6 APTC60HM70T3 Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS (on)MAX 250µs pulse test @ < 0.5 duty cycle 160 120 80 VGS=15&10V RDS(on) Drain to Source ON Resistance 1.1 1.05 1 0.95 0.9 0 DC Drain Current vs Case Temperature 45 VGS=10V 40 35 30 25 20 15 10 5 0 25 50 75 100 125 TC, Case Temperature (°C) 150 VGS =20V 10 20 30 40 50 60 I D, Drain Current (A) APT website – http://www.advancedpower.com 4-6 APTC60HM70T3 – Rev 0 September, 2004 APTC60HM70T3 RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area V GS=10V ID= 39A Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) 1000 I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 100 10 1 0.1 1 limited by RDSon 100 µs 1 ms DC line 10 ms Single pulse TJ =150°C 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS , Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) 14 12 10 8 6 4 2 0 0 50 100 150 200 Gate Charge (nC) 250 300 APTC60HM70T3 – Rev 0 September, 2004 10000 Ciss Coss ID=39A TJ=25°C V DS=120V VDS=300V V DS =480V 1000 Crss 100 10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) APT website – http://www.advancedpower.com 5-6 APTC60HM70T3 350 300 td(on) and td(off) (ns) Delay Times vs Current 120 td(off) VDS=400V RG=5Ω TJ=125°C L=100µH Rise and Fall times vs Current VDS=400V RG=5Ω T J=125°C L=100µH 100 tr and t f (ns) 250 200 150 100 50 0 0 10 20 30 40 50 60 70 ID, Drain Current (A) Switching Energy vs Current 2.5 Switching Energy (mJ) VDS=400V RG=5Ω TJ=125°C L=100µH tf 80 60 40 20 0 0 td(on) tr 10 20 30 40 50 60 70 ID, Drain Current (A) Switching Energy vs Gate Resistance 5 4 3 2 1 0 V DS =400V ID=39A T J=125°C L=100µH Switching Energy (mJ) 2 1.5 Eoff Eon Eoff 1 0.5 0 0 10 20 30 40 50 60 ID, Drain Current (A) 70 Eon 0 5 10 15 20 25 30 35 40 45 50 Gate Resistance (Ohms) Operating Frequency vs Drain Current 140 Frequency (kHz) I DR, Reverse Drain Current (A) 160 Source to Drain Diode Forward Voltage 1000 120 100 80 60 40 20 0 5 V DS =400V D=50% RG =5Ω T J=125°C T C=75°C hard switching ZCS ZVS 100 TJ=150°C 10 TJ =25°C 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) APTC60HM70T3 – Rev 0 September, 2004 10 15 20 25 30 ID, Drain Current (A) 35 “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6-6