APTC80A10SCT

APTC80A10SCT Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module NTC2 VBUS Q1 VDSS = 800V RDSon = 100mW max @ Tj = 25°C ID = 42A @ Tc = 25°C Application · Motor control · Switched Mode Power Supplies · Uninterruptible Power Supplies Features · G1 OUT S1 Q2 · Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated G2 0/VBUS S2 NTC1 Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration · · · · OUT VBUS OUT 0/VBUS S1 G1 S2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Benefits · Outstanding performance at high frequency operation · Direct mounting to heatsink (isolated package) · Low junction to case thermal resistance · Solderable terminals both for power and signal for easy PCB mounting · Low profile Max ratings 800 42 32 172 ±30 100 416 24 0.5 670 Unit V A APTC80A10SCT – Rev 1 May, 2004 Tc = 25°C Tc = 80°C Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C V mW W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–7 APTC80A10SCT All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V, ID = 750µA VGS = 0V,VDS = 800V VGS = 0V,VDS = 800V Min 800 Tj = 25°C Tj = 125°C 2.1 Typ Max 75 750 100 3.9 ±175 Unit V µA mW V nA VGS = 10V, ID = 21A VGS = VDS, ID = 3mA VGS = ±20 V, VDS = 0V 3 Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy u Turn-on Switching Energy Turn-off Switching Energy u Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 400V ID = 42A Inductive switching @ 125°C VGS = 15V VBus = 533V ID = 42A RG = 1.8W Inductive switching @ 25°C VGS = 15V, VBus = 533V ID = 42A, RG = 1.8Ω Inductive switching @ 125°C VGS = 15V, VBus = 533V ID = 42A, RG = 1.8Ω Min Typ 6761 3137 161 273 36 138 10 13 83 35 437 417 765 513 µJ µJ Max Unit pF nC ns u In accordance with JEDEC standard JESD24-1. Series diode ratings and characteristics Symbol Characteristic Maximum Average Forward Current IF(AV) VF Diode Forward Voltage Test Conditions 50% duty cycle IF = 30A IF = 60A IF = 30A IF = 30A VR = 133V di/dt = 200A/µs IF = 30A VR = 133V di/dt = 200A/µs Min Tc = 85°C Typ 30 1.05 Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 24 48 33 150 1 ns nC APTC80A10SCT – Rev 1 May, 2004 Max 1.15 Unit A V trr Qrr Reverse Recovery Time Reverse Recovery Charge APT website – http://www.advancedpower.com 2–7 APTC80A10SCT Parallel diode ratings and characteristics Symbol Characteristic Maximum Average Forward Current IF(AV) VF QC Q Diode Forward Voltage Total Capacitive Charge Total Capacitance Test Conditions 50% duty cycle Min Tc = 125°C Tj = 25°C Tj = 175°C IF = 20A Typ 20 1.6 2.6 56 180 132 Max 1.8 3.0 Unit A V nC pF IF = 20A, VR = 600V di/dt =1200A/µs f = 1MHz, VR = 200V f = 1MHz, VR = 400V Min Transistor Series diode 2500 -40 -40 -40 Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Typ Max 0.3 1.2 0.8 150 125 100 4.7 160 Typ 68 4080 Max Unit °C/W Parallel diode RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle VGS=15&10V 6.5V 6V 5.5V 5V 4.5V 4V 120 90 60 30 0 0 T J=25°C T J=125°C T J=-55°C 1 2 3 4 5 6 7 8 VGS, Gate to Source Voltage (V) RDS(on) Drain to Source ON Resistance DC Drain Current vs Case Temperature 45 ID, DC Drain Current (A) 40 35 30 25 20 15 10 5 0 25 50 75 100 125 150 TC, Case Temperature (°C) APTC80A10SCT – Rev 1 May, 2004 Normalized to VGS=10V @ 21A APT website – http://www.advancedpower.com 4–7 APTC80A10SCT RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 -50 0 50 100 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 -50 0 50 100 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) Ciss Coss Crss 1000 ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 0 50 100 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area VGS=10V ID= 21A 100 limited by RDSon 100µs 10 1ms 10ms 1 Single pulse TJ=150°C 1 100ms 0 10 100 1000 VDS, Drain to Source Voltage (V) VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source Voltage 16 14 12 10 8 6 4 2 0 0 50 100 150 200 250 300 Gate Charge (nC) VDS=640V ID=42A TJ=25°C VDS=160V VDS=400V 10000 1000 100 10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) APT website – http://www.advancedpower.com 5–7 APTC80A10SCT – Rev 1 May, 2004 APTC80A10SCT Delay Times vs Current Rise and Fall times vs Current 50 td(off) td(on) and td(off) (ns) 40 tr and tf (ns) VDS=533V RG=1.8Ω TJ=125°C L=100µH 100 80 60 40 20 0 20 30 40 50 60 ID, Drain Current (A) 70 tf 30 20 10 0 20 VDS=533V RG=1.8Ω TJ=125°C L=100µH tr td(on) 30 40 50 60 ID, Drain Current (A) 70 Switching Energy vs Current 1.6 VDS=533V RG=1.8Ω TJ=125°C L=100µH Switching Energy vs Gate Resistance 3 Switching Energy (mJ) VDS=533V ID=42A TJ=125°C L=100µH Eon and Eoff (mJ) 1.2 Eon 2.5 2 1.5 1 0.5 0 Eoff 0.8 Eoff 0.4 Eon 0 20 30 40 50 60 ID, Drain Current (A) 70 0 2.5 5 7.5 10 12.5 15 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000 Operating Frequency vs Drain Current 350 Frequency (kHz) 300 250 200 150 100 50 0 10 15 20 25 30 35 ID, Drain Current (A) 40 VDS=533V D=50% RG=1.8Ω TJ=125°C IDR, Reverse Drain Current (A) 400 100 TJ=150°C 10 TJ=25°C 1 0.2 0.6 1 1.4 1.8 VSD, Source to Drain Voltage (V) APT website – http://www.advancedpower.com 6–7 APTC80A10SCT – Rev 1 May, 2004 APTC80A10SCT Typical SiC Diode Performance Curve M aximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 Thermal Impedance (°C/W) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.00001 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 0.01 0.1 1 Single Pulse 0.9 Rectangular Pulse Duration (Seconds) Forward Characteristics TJ=25°C Reverse Characteristics 800 IR Reverse Current (µA) 40 IF Forward Current (A) 30 20 TJ=75°C 600 400 TJ=125°C TJ=75°C TJ=125°C TJ=175°C TJ=25°C 10 0 0 0.5 1 1.5 2 TJ=175°C 200 2.5 3 3.5 0 400 600 VF Forward Voltage (V) Capacitance vs.Reverse Voltage 800 1000 1200 1400 1600 VR Reverse Voltage (V) 1600 C, Capacitance (pF) 1200 800 400 0 1 10 100 VR Reverse Voltage 1000 APTC80A10SCT – Rev 1 May, 2004 “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 7–7