APTC80DDA15T3

APTC80DDA15T3 Dual Boost chopper Super Junction MOSFET VDSS = 800V RDSon = 150mΩ max @ Tj = 25°C ID = 28A @ Tc = 25°C Applicatio n • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Q2 4 Power Module 13 14 CR1 22 7 CR2 23 Q1 26 8 27 29 15 30 31 R1 32 16 3 • • • • - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Each leg can be easily paralleled to achieve a single boost of twice the current capability All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–6 APTC80DDA15T3 – Rev 0 September, 2004 Max ratings 800 28 21 110 ±30 150 277 24 0.5 670 Unit V A APTC80DDA15T3 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol B VDSS IDSS RDS(on) VGS(th) IGSS Characteristic Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0 V, ID = 375µA Min 800 VGS = 0V,VDS = 800V VGS = 0V,VDS = 800V Typ Max 50 375 150 3.9 ±150 Unit V µA mΩ V nA Tj = 25°C Tj = 125°C 2.1 3 VGS = 10V, ID = 14A VGS = VDS, ID = 2 mA VGS = ±20 V, VDS = 0 V Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0 V VDS = 25V f = 1MHz VGS = 10V VBus = 400V ID = 28A Inductive switching @125°C VGS = 15V VBus = 533V ID = 28A R G = 2.5Ω Inductive switching @ 25°C VGS = 15V, VBus = 533V ID = 28A, R G = 2.5 Ω Inductive switching @ 125°C VGS = 15V, VBus = 533V ID = 28A, R G = 2.5 Ω Min Typ 4507 2092 108 180 22 90 10 13 83 35 486 278 850 342 Max Unit pF nC ns µJ µJ Diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF(A V) VF Maximum Reverse Leakage Current Maximum Average Forward Current Diode Forward Voltage Test Conditions VR=1000V 50% duty cycle Min 1000 Tj = 25°C Tj = 125°C T c = 100°C Typ Max 250 500 Unit V µA A trr Qrr Reverse Recovery Time Reverse Recovery Charge IF = 60A VR = 667V di/dt=200A/µs Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 280 350 760 3600 ns nC Eon includes diode reverse recovery. In accordance with JEDEC standard JESD24-1. APT website – http://www.advancedpower.com 2–6 APTC80DDA15T3 – Rev 0 September, 2004 IF = 60A IF = 120A IF = 60A Tj = 125°C 60 1.9 2.2 1.7 2.5 V APTC80DDA15T3 Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 Min Typ Max 0.45 0.9 150 125 100 4.7 110 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle VGS =15&10V 6V 5.5V 5V 4.5V 4V ID, Drain Current (A) 6.5V 80 60 40 20 0 0 TJ =25°C TJ =125°C T J=-55°C 1 2 3 4 5 6 7 8 VGS, Gate to Source Voltage (V) RDS(on) Drain to Source ON Resistance DC Drain Current vs Case Temperature 30 ID, DC Drain Current (A) Normalized to V GS=10V @ 14A VGS=10V 25 20 15 10 5 0 TC, Case Temperature (°C) APTC80DDA15T3 – Rev 0 September, 2004 25 50 75 100 125 150 APT website – http://www.advancedpower.com 4–6 APTC80DDA15T3 RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 -50 0 50 100 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) I D, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 -50 0 50 100 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) 1000 ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 0 50 100 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area V GS=10V ID= 14A 100 limited by RDSo n 100µs 10 1ms 10ms Single pulse TJ =150°C 1 100ms 1 0 10 100 1000 VDS, Drain to Source Voltage (V) VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source Voltage 16 14 12 10 8 6 4 2 0 0 40 80 120 160 200 APTC80DDA15T3 – Rev 0 September, 2004 VDS=640V ID=28A T J=25°C V DS =160V VDS=400V 10000 Ciss Coss Crss 1000 100 10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) Gate Charge (nC) APT website – http://www.advancedpower.com 5–6 APTC80DDA15T3 Delay Times vs Current Rise and Fall times vs Current 100 t d(off) td(on) and td(off) (ns) 50 40 t r and tf (ns) V DS=533V RG=2.5Ω T J=125°C L=100µH tf 80 60 40 20 0 10 20 30 40 I D, Drain Current (A) Switching Energy vs Current 30 20 10 0 VDS=533V RG=2.5Ω T J=125°C L=100µH tr t d(on) 50 10 20 30 40 I D, Drain Current (A) 50 Switching Energy vs Gate Resistance 1500 1200 900 600 300 0 Switching Energy (µJ) Eon and Eoff (µJ) VDS=533V RG=2.5Ω TJ=125°C L=100µH 2500 2000 1500 1000 500 0 V DS=533V ID=28A T J=125°C L=100µH Eon Eon Eoff Eoff 10 20 30 40 I D, Drain Current (A) 50 0 5 10 15 20 Gate Resistance (Ohms) 25 Operating Frequency vs Drain Current 350 Frequency (kHz) ZVS 300 250 200 150 100 50 0 6 Hard switching ZCS VDS=533V D=50% RG=2.5Ω TJ=125°C TC=125°C IDR , Reverse Drain Current (A) 400 Source to Drain Diode Forward Voltage 1000 100 TJ=150°C 10 TJ=25°C 1 0.2 APTC80DDA15T3 – Rev 0 September, 2004 8 10 12 14 16 18 20 22 24 26 ID, Drain Current (A) 0.6 1 1.4 1.8 VSD, Source to Drain Voltage (V) “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6–6