APTGF10X60BTP2

APTGF10X60RTP2 APTGF10X60BTP2 Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module Application • AC Motor control VCES = 600V IC = 10A @ Tc = 80°C Features • Non Punch Through (NPT) Fast IGBT® - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Very low stray inductance High level of integration Internal thermistor for temperature monitoring • • • APTGF10X60RTP2: Without Brake (Pin 7 & 14 not connected) 20 19 18 17 16 15 14 13 12 11 10 Benefits • • • • • • • • Low conduction losses Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile 21 22 9 8 23 24 7 1 2 3 4 5 6 All ratings @ Tj = 25°C unless otherwise specified IFSM Surge Forward Current tp = 10ms Tj = 150°C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-4 APTGF10X60BTP2 – Rev 0 TC = 80°C Tj = 25°C A July, 2003 1. Absolute maximum ratings Diode rectifier Absolute maximum ratings Symbol VRRM ID Parameter Repetitive Peak Reverse Voltage DC Forward Current Max ratings 1600 10 300 230 Unit V APTGF10X60RTP2 APTGF10X60BTP2 IGBT & Diode Brake (only for APTGF10X60BTP2) Absolute maximum ratings Symbol VCES IC ICM VGE PD IF Parameter Collector - Emitter Breakdown Voltage TC = 25°C TC = 80°C TC = 25°C TC = 25°C TC = 80°C Max ratings 600 20 10 25 ±20 80 10 Unit V A V W A Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation DC Forward Current Absolute maximum ratings IGBT & Diode Inverter Symbol VCES IC ICM VGE PD SCSOA IF IFSM Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Short circuit Safe Operating Area DC Forward Current Surge Forward Current TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C TC = 80°C TC = 80°C tp = 1ms Max ratings 600 20 10 25 ±20 80 45A @ 360V 10 20 Unit V A V W A 2. Electrical Characteristics Diodes Rectifier Electrical Characteristics Symbol Characteristic Reverse Current IR VF RthJC Forward Voltage Junction to Case Test Conditions VR = 1600V Tj = 150°C Tj = 25°C IF = 30A Tj = 150°C IF = 10A Min Typ 2 1.3 0.9 Max 1.5 0.95 1 Unit mA V °C/W IGBT Brake & Diode (only for APTGF10X60BTP2) Electrical Characteristics Symbol Characteristic ICES VCE(on) VGE(th) IGES Cies VF RthJC Test Conditions Zero Gate Voltage Collector Current Collector Emitter on Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Input Capacitance Forward Voltage Junction to Case VGE = 0V VCE = 600V Tj = 25°C Tj = 125°C Min Typ 0.5 0.8 1.95 2.2 5.5 600 1.25 1.2 Max 500 2.35 6.5 300 1.7 1.5 2.3 Unit µA mA V V nA July, 2003 2-4 APTGF10X60BTP2 – Rev 0 Tj = 25°C VGE = 15V IC = 10A Tj = 125°C VGE = VCE , IC = 0.35mA VGE = 20V, VCE = 0V VGE = 0V, VCE = 25V f = 1MHz Tj = 25°C VGE = 0V IF = 10A Tj = 125°C IGBT Diode 4.5 pF V °C/W APT website – http://www.advancedpower.com APTGF10X60RTP2 APTGF10X60BTP2 IGBT & Diode Inverter Electrical Characteristics Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES VCE(on) VGE(th) IGES Cies Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eoff VF Qrr RthJC Zero Gate Voltage Collector Current Collector Emitter on Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Input Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn off Energy Forward Voltage Reverse Recovery Charge Junction to Case Test Conditions VGE = 0V, IC = 500µA VGE = 0V Tj = 25°C VCE = 600V Tj = 125°C Tj = 25°C VGE =15V IC = 10A Tj = 125°C VGE = VCE , IC = 0.6 mA VGE = 20V, VCE = 0V VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 10A RG = 82Ω Inductive Switching (125°C) VGE = ±15V VBus = 300V IC = 10A RG = 82Ω VGE = 0V IF = 10A IF = 10A VR = 300V di/dt=400A/µs Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C IGBT Diode Min 600 Typ 0.5 0.8 1.95 2.2 5.5 600 35 30 220 18 35 35 230 30 0.3 1.25 1.2 0.85 1.35 Max 500 2.35 6.5 300 Unit V µA mA V V nA pF 4.5 ns ns mJ 1.7 V µC 1.5 2.3 °C/W Temperature sensor NTC Symbol Characteristic R25 Resistance @ 25°C B 25/50 T25 = 298.16 K Min Typ 5 3375 Max Unit kΩ K RT = R25 exp B25 / 50 11 − T25 T T: Thermistor temperature RT: Thermistor value at T M5 N.m g APT website – http://www.advancedpower.com 3-4 APTGF10X60BTP2 – Rev 0 Symbol Characteristic RMS Isolation Voltage, any terminal to case t =1 min, VISOL I isol