APTGF15H120T3
Full - Bridge NPT IGBT Power Module
13 14
VCES = 1200V IC = 15A @ Tc = 80°C
Applicatio n • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Non Punch Through (NPT) Fast IGBT® - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated - Symmetrical design • Kelvin emitter for easy drive • Very low stray inductance • High level of integration • Internal thermistor for temperature monitoring Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Easy paralleling due to positive TC of VCEsat • Each leg can be easily paralleled to achieve a phase leg of twice the current capability
Q1 18 19
CR1
CR3
Q3 11 10
22 23 Q2
7 8 CR4 Q4
26 27
CR2
4 3
29 15
30
31 R1
32 16
28 27 26 25 29 30
23 22
20 19 18 16 15
31 32 2 3 4 7 8 10 11 12
14 13
All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area
TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C
A V W
30A@1150V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-6
APTGF15H120T3 – Rev 0
September, 2004
Parameter Collector - Emitter Breakdown Voltage
Max ratings 1200 25 15 60 ±20 140
Unit V
APTGF15H120T3
All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics
Symbol Characteristic B VCES ICES VCE(on) VGE(th) IGES Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Test Conditions Min Collector - Emitter Breakdown Voltage Zero Gate Voltage Collector Current Collector Emitter on Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy VGE = 0 V, IC = 500µA Tj = 25°C VGE = 0 V VCE = 1200V Tj = 125°C Tj = 25°C VGE =15V IC = 15A Tj = 125°C VGE = VCE , IC = 1 mA VGE = 20V, VCE = 0 V Test Conditions VGE = 0 V VCE = 25V f = 1MHz VGE = 15V VBus = 300V IC =15A Inductive Switching (25°C) VGE = 15V VBus = 400V IC = 15A R G = 33Ω Inductive Switching (125°C) VGE = 15V VBus = 400V IC = 15A R G = 33Ω
1200
Typ 1 1 3.2 4.0
Max 500 3.7 6 400
Unit V µA mA V V nA Unit pF
2.5 4
Dynamic Characteristics
Min
Typ 1000 150 70 99 10 70 60 50 315 30 60 50 356 40 2 1
Max
nC
ns
ns
mJ
Eon includes diode reverse recovery In accordance with JEDEC standard JESD24-1
Reverse diode ratings and characteristics
Symbol Characteristic VRRM IRM IF(A V) VF trr Qrr
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25°C Tj = 125°C Tj = 125°C Tj = 25°C Tj = 125
Min 1200
Typ
Max 250 500
Unit V µA
September, 2004 2-6 APTGF15H120T3 – Rev 0
Maximum Reverse Leakage Current Maximum Average Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
VR=1200V
50% duty cycle
15 2.9 2.6 0.5 0.4 1.2 3.4
A V µs µC
IF = 15A VGE = 0 V IF = 15A VR = 600V di/dt =400A/µs
APT website – http://www.advancedpower.com
APTGF15H120T3
Temperature sensor NTC
Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.16 K Min Typ 68 4080 Max Unit kΩ K
RT =
R 25
1 1 RT : Thermistor value at T exp B 25 / 85 T − T 25
T: Thermistor temperature
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt
Thermal and package characteristics
Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode
Min
Typ
Max 0.9 2.0 150 125 100 4.7 110
Unit °C/W V °C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol
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