APTGF165DA60D1

APTGF165DA60D1 Boost Chopper NPT IGBT Power Module VCES = 600V IC = 165A @ Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Non Punch Through (NPT) fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Low stray inductance - M5 power connectors • High level of integration 3 4 5 7 6 2 1 Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operation Area TC = 25°C Tj = 125°C V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-3 APTGF165DA60D1 – Rev 0 400A@420V July, 2003 TC = 25°C TC = 80°C TC = 25°C Max ratings 600 230 165 400 ±20 730 Unit V A APTGF165DA60D1 Electrical Characteristics Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES VCE(on) VGE(th) IGES Symbol Cies Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eoff Zero Gate Voltage Collector Current Collector Emitter on Voltage Gate Threshold Voltage Gate – Emitter Leakage Current All ratings @ Tj = 25°C unless otherwise specified Test Conditions VGE = 0V, IC = 5 mA Tj = 25°C VGE = 0V VCE = 600V Tj = 125°C Tj = 25°C VGE = 15V IC = 200A Tj = 125°C VGE = VCE , IC = 4 mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 200A RG = 1.5Ω Inductive Switching (125°C) VGE = ±15V VBus = 300V IC = 200A RG = 1.5Ω Min 600 Typ 1 1 2.0 2.2 Max 500 2.5 6.5 400 Unit V µA mA V V nA 4.5 Dynamic Characteristics Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn off energy Min Typ 9000 800 165 40 250 35 180 50 285 40 6.3 Max Unit pF ns ns mJ Reverse diode ratings and characteristics Symbol Characteristic VF Er Qrr Diode Forward Voltage Reverse Recovery Energy Reverse Recovery Charge Test Conditions IF = 200A VGE = 0V IF = 200A VR = 300V di/dt =900A/µs IF = 200A VR = 300V di/dt =900A/µs Min Tj = 25°C Tj = 125°C Tj = 125°C Tj = 25°C Tj = 125°C Typ 1.25 1.2 4.1 12 19 Max 1.6 Unit V mJ µC Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol