APTGF180SK60T

APTGF180SK60T Buck chopper NPT IGBT Power Module VBUS Q1 G1 NTC2 VCES = 600V IC = 180A @ Tc = 80°C Application · AC and DC motor control · Switched Mode Power Supplies Features · Non Punch Through (NPT) THUNDERBOLT IGBT® E1 OUT 0/VBU S SENSE · · NTC1 0/VBU S · · - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration 0/VBUS SENSE OUT VBUS 0/VBUS OUT E1 G1 0/VBUS SENSE NTC2 NTC1 Benefits · Outstanding performance at high frequency operation · Stable temperature behavior · Very rugged · Direct mounting to heatsink (isolated package) · Low junction to case thermal resistance · Solderable terminals both for power and signal for easy PCB mounting · Easy paralleling due to positive TC of VCEsat · Low profile Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area Tc = 25°C Tc = 80°C Tc = 25°C Tc = 25°C Tj = 150°C APTGF180SK60T – Rev 1 March, 2004 Max ratings 600 220 180 630 ±20 833 630A @ 600V Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-6 APTGF180SK60T All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES VCE(on) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter on Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, IC = 150µA Tj = 25°C VGE = 0V VCE = 600V Tj = 125°C Tj = 25°C VGE =15V IC = 180A Tj = 125°C VGE = VCE, IC = 2mA VGE = 20 V, VCE = 0V Min 600 Typ Max 150 3000 2.5 5 ±200 Unit V µA V V nA 2.0 2.2 3 Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Eon Eoff Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy u Turn-off Switching Energy v Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy u Turn-off Switching Energy v Test Conditions VGE = 0V VCE = 25V f = 1MHz VGS = 15V VBus = 300V IC = 180A Inductive Switching (25°C) VGE = 15V VBus = 400V IC = 180A RG = 2.5 W Min Typ 8.6 0.94 0.8 660 580 400 26 25 150 30 6.74 5.74 26 25 170 40 8.6 7 Max Unit nF nC ns mJ Inductive Switching (125°C) VGE = 15V VBus = 400V IC = 180A RG = 2.5 W ns mJ Reverse diode ratings and characteristics Symbol Characteristic Maximum Average Forward Current IF(AV) VF Diode Forward Voltage Test Conditions 50% duty cycle Tc = 80°C Min Tj = 125°C Tj = 25°C Tj = 125°C 220 780 2900 Qrr Reverse Recovery Charge nC u Eon includes diode reverse recovery v In accordance with JEDEC standard JESD24-1 APT website – http://www.advancedpower.com 2-6 APTGF180SK60T – Rev 1 March, 2004 trr Reverse Recovery Time IF = 200A IF = 400A IF = 200A IF = 200A VR = 400V di/dt =400A/µs IF = 200A VR = 400V di/dt =400A/µs Tj = 125°C Tj = 25°C Typ 200 1.6 1.9 1.4 180 Max 1.8 Unit A V ns APTGF180SK60T Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol