APTGF25DSK120T3

APTGF25DSK120T3 Dual Buck chopper NPT IGBT Power Module 13 14 VCES = 1200V IC = 25A @ Tc = 80°C Applicatio n • AC and DC motor control • Switched Mode Power Supplies Q1 18 19 Q2 11 10 22 23 7 8 CR2 CR1 29 15 30 31 R1 32 16 Features • Non Punch Through (NPT) Fast IGBT® - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated - Symmetrical design • Kelvin emitter for easy drive • Very low stray inductance • High level of integration • Internal thermistor for temperature monitoring Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Easy paralleling due to positive TC of VCEsat • Each leg can be easily paralleled to achieve a single buck of twice the current capability. 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C A V W 50A@1150V These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-6 APTGF25DSK120T3 – Rev 0 January, 2005 Parameter Collector - Emitter Breakdown Voltage Max ratings 1200 40 25 100 ±20 208 Unit V APTGF25DSK120T3 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(on) VGE(th) IGES Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Test Conditions Min Zero Gate Voltage Collector Current Collector Emitter on Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy VGE = 0 V VCE = 1200V Tj = 25°C Tj = 125°C Tj = 25°C VGE =15V IC = 25A Tj = 125°C VGE = VCE , IC = 1 mA VGE = 20V, VCE = 0 V Test Conditions VGE = 0 V VCE = 25V f = 1MHz VGE = 15V VBus = 300V IC =25A Inductive Switching (25°C) VGE = 15V VBus = 400V IC = 25A R G = 22Ω Inductive Switching (125°C) VGE = 15V VBus = 400V IC = 25A R G = 22Ω Typ 1 1 3.2 4.0 Max 500 3.7 6 400 Typ 1650 250 110 160 10 70 60 50 305 30 60 50 346 40 3.5 1.5 Max Unit µA mA V V nA Unit pF 2.5 4 Dynamic Characteristics Min nC ns ns mJ Eon includes diode reverse recovery In accordance with JEDEC standard JESD24-1 Reverse diode ratings and characteristics Symbol Characteristic VRRM IRM IF(A V) VF Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25°C Tj = 125°C Tc = 70°C Min 1200 Typ Max 250 500 Unit V µA A V January, 2005 2-6 APTGF25DSK120T3 – Rev 0 Maximum Reverse Leakage Current Maximum Average Forward Current Diode Forward Voltage VR=1200V 50% duty cycle trr Qrr Reverse Recovery Time Reverse Recovery Charge IF = 60A IF = 120A IF = 60A IF = 60A VR = 800V di/dt =200A/µs Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 60 2 2.3 1.8 400 470 1.2 4 2.5 ns µC IF = 60A VR = 800V di/dt =200A/µs APT website – http://www.advancedpower.com APTGF25DSK120T3 Temperature sensor NTC Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.16 K Min Typ 68 4080 Max Unit kΩ K RT = R 25   1 1  RT : Thermistor value at T exp B 25 / 85    T − T    25  T: Thermistor temperature Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Thermal and package characteristics Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode Min Typ Max 0.6 0.9 150 125 100 4.7 110 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol