APTGF50TA120P
Triple phase leg NPT IGBT Power Module
VBUS1 VBUS2 VBUS3
VCES = 1200V IC = 50A @ Tc = 80°C
Applicatio n • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Very low (12mm) profile • Easy paralleling due to positive TC of VCEsat • Each leg can be easily paralleled to achieve a phase leg of three times the current capability • Module can be configured as a three phase bridge • Module can be configured as a boost followed by a full bridge Max ratings 1200 75 50 150 ±20 312 150A @ 1200V Unit V A V W
APTGF50TA120P – Rev 0 September, 2004
G1
G3
G5
E1
U
E3
V
E5
W
G2
G4
G6
E2 0/VBUS1
E4 0/VBUS2
E6 0/VBUS3
VBUS 1
VBUS 2
VBUS 3
G1 0/VBUS 1 E1 E2 G2 0/VBUS 2
G3 E3 E4 G4 0/VBUS 3
G5 E5 E6 G6
U
V
W
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Tc = 25°C Tc = 80°C Tc = 25°C Tc = 25°C Tj = 150°C
Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
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APTGF50TA120P
All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics
Symbol Characteristic B VCES Collector - Emitter Breakdown Voltage ICES VCE(on) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter on Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0 V, IC = 500 µA VGE = 0 V Tj = 25°C VCE = 1200V Tj = 125°C VGE =15V Tj = 25°C IC = 50A Tj = 125°C VGE = VCE, IC = 1 mA VGE = ±20 V, VCE = 0 V Min 1200 Typ Max 500 2500 3.7 6.5 100 Unit V µA V V nA
3.2 4.0 4.5
Dynamic Characteristics
Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Eon Eoff Td(on) Tr Td(off) Tf Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGE = 0 V VCE = 25V f = 1MHz VGS = 15V VBus = 600V IC = 50A Inductive Switching (25°C) VGE = 15V VBus = 600V IC = 50A R G = 5Ω
Min
Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 50A R G = 5Ω
Typ 3450 330 220 330 35 200 35 65 320 30 5.4 2.3 35 65 360 40 6.9 3.05
Max
Unit pF
nC
ns
mJ
ns
mJ
Eon includes diode reverse recovery In accordance with JEDEC standard JESD24-1
APT website – http://www.advancedpower.com
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APTGF50TA120P – Rev 0 September, 2004
APTGF50TA120P
Reverse diode ratings and characteristics
Symbol Characteristic VRRM IRM IF(A V) VF
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25°C Tj = 125°C Tc = 70°C
Min 1200
Typ
Max 250 500
Unit V µA A
Maximum Reverse Leakage Current Maximum Average Forward Current Diode Forward Voltage
VR=1200V
50% duty cycle
IF = 60A IF = 120A IF = 60A IF = 60A VR = 800V di/dt =200A/µs
Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Min IGBT Diode 2500 -40 -40 -40 3
60 2 2.3 1.8 400 470 1200 4000 Typ
2.5 V
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
ns nC
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
Max 0.4 0.9 150 125 100 5 250
Unit °C/W V °C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol
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