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APTGF90TA60P

APTGF90TA60P

  • 厂商:

    ADPOW

  • 封装:

  • 描述:

    APTGF90TA60P - Triple phase leg NPT IGBT Power Module - Advanced Power Technology

  • 数据手册
  • 价格&库存
APTGF90TA60P 数据手册
APTGF90TA60P Triple phase leg NPT IGBT Power Module VBUS1 VBUS2 VBUS3 VCES = 600V IC = 90A @ Tc = 80°C Applicatio n • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • G1 G3 G5 E1 U E3 V E5 W Non Punch Through (NPT) THUNDERBOLT IGBT ® G2 G4 G6 E2 0/VBUS1 E4 0/VBUS2 E6 0/VBUS3 • • VBUS 1 VBUS 2 VBUS 3 G1 0/VBUS 1 E1 E2 G2 0/VBUS 2 G3 E3 E4 G4 0/VBUS 3 G5 E5 E6 G6 U V W • Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Very low (12mm) profile • Easy paralleling due to positive TC of VCEsat • Each leg can be easily paralleled to achieve a phase leg of three times the current capability • Module can be configured as a three phase bridge • Module can be configured as a boost followed by a full bridge Max ratings 600 110 90 315 ±20 416 315A @ 600V Unit V A V W - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections High level of integration Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area Tc = 25°C Tc = 80°C Tc = 25°C Tc = 25°C Tj = 150°C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-6 APTGF90TA60P – Rev 0 September, 2004 Parameter Collector - Emitter Breakdown Voltage APTGF90TA60P All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic B VCES Collector - Emitter Breakdown Voltage ICES VCE(on) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter on Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0 V, IC = 100µA Tj = 25°C VGE = 0 V VCE = 600V Tj = 125°C VGE =15V IC = 90A Tj = 25°C Tj = 125°C VGE = VCE, IC = 1 mA VGE = 20 V, VCE = 0 V Min 600 Typ Max 100 1000 2.0 2.2 3 2.5 5 ±150 Unit V µA V V nA Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Eon Eoff Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0 V VCE = 25V f = 1MHz VGS = 15V VBus = 300V IC = 90A Inductive Switching (25°C) VGE = 15V VBus = 400V IC = 90A RG = 5 Ω Min Inductive Switching (125°C) VGE = 15V VBus = 400V IC = 90A RG = 5 Ω Typ 4300 470 400 330 290 200 26 25 150 30 3.35 2.85 26 25 170 40 4.3 3.5 Max Unit pF nC ns mJ ns mJ Eon includes diode reverse recovery In accordance with JEDEC standard JESD24-1 APT website – http://www.advancedpower.com 2-6 APTGF90TA60P – Rev 0 September, 2004 APTGF90TA60P Reverse diode ratings and characteristics Symbol Characteristic VRRM IRM IF(A V) VF Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25°C Tj = 125°C Tc = 70°C Min 600 Typ Max 250 500 Unit V µA A Maximum Reverse Leakage Current Maximum Average Forward Current Diode Forward Voltage VR=600V 50% duty cycle IF = 60A IF = 120A IF = 60A IF = 60A VR = 400V di/dt =200A/µs Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 60 1.6 1.9 1.4 130 170 220 920 1.8 V trr Qrr Reverse Recovery Time Reverse Recovery Charge ns nC Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode Min Typ Max 0.3 0.9 150 125 100 5 250 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol
APTGF90TA60P 价格&库存

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