APTGS75X170TE3
3 Phase bridge NPT IGBT Power Module
•
VCES = 1700V IC = 75A @ Tc = 80°C
Application AC Motor control
Features • Non Punch Through (NPT) Low Loss IGBT® - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance High level of integration Internal thermistor for temperature monitoring
19
18
17 16 15
• • • • Benefits
20
14
21
13
12
34
56
78
9 10
11 12
• • • • • • •
Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage
Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Operating Area
TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C
150A@1600V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-3
APTGS75X170TE3 – Rev 0
July, 2003
Max ratings 1700 150 75 250 ±20 625
Unit V A V W
APTGS75X170TE3
Electrical Characteristics
Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES VCE(on) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter on Voltage Gate Threshold Voltage Gate – Emitter Leakage Current
All ratings @ Tj = 25°C unless otherwise specified
Test Conditions VGE = 0V, IC = 1mA Tj = 25°C VGE = 0V VCE = 1700V Tj = 125°C Tj = 25°C VGE =15V IC = 75A Tj = 125°C VGE = VCE , IC = 3.5 mA VGE = 20V, VCE = 0V Min Typ Max 0.15 3.3 6.5 100
1700
Unit V mA V V nA
0.03 2 2.7 3.2 4.5
Dynamic Characteristics
Symbol Characteristic Cies Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eoff Input Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn off Energy
Test Conditions VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 900V IC = 75A RG = 20Ω Inductive Switching (125°C) VGE = ±15V VBus = 900V IC = 75A RG = 20Ω
Min
Typ 5000 100 100 800 30 100 100 900 30 22
Max
Unit pF
ns
ns
mJ
Reverse diode ratings and characteristics
Symbol Characteristic VF Er Qrr Diode Forward Voltage Reverse Recovery Energy Reverse Recovery Charge
Test Conditions IF = 75A VGE = 0V IF = 75A VR = 900V di/dt =900A/µs IF = 75A VR = 900V di/dt =900A/µs
Min Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C
Typ 2.2 2.0 3.5 6.5 9 19
Max 2.6
Unit V mJ µC
Temperature sensor NTC
Symbol Characteristic R25 Resistance @ 25°C B 25/50 T25 = 298.16 K
exp B25 / 50
APT website – http://www.advancedpower.com
2-3
APTGS75X170TE3 – Rev 0
RT =
R25 11 − T25 T
T: Thermistor temperature RT: Thermistor value at T
July, 2003
Min
Typ 5 3375
Max
Unit kΩ K
APTGS75X170TE3
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol
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