APTGT100DH120TG

APTGT100DH120TG Asymmetrical - Bridge Fast Trench + Field Stop IGBT® Power Module V BUS VBUS SENSE Q1 G1 CR3 VCES = 1200V IC = 100A @ Tc = 80°C Applicatio n • Welding converters • Switched Mode Power Supplies • Switched Reluctance Motor Drives Features • Fast Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration • Internal thermistor for temperature monitoring Benefits • Stable temperature behavior • Very rugged • Solderable terminals for easy PCB mounting • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC o f VCEsat • Low profile • RoHS Compliant Max ratings 1200 140 100 200 ±20 480 200A @ 1100V Unit V APTGT100DH120TG – Rev 1 October, 2005 E1 OUT1 OUT2 Q4 G4 CR2 E4 0/VBUS SENSE NT C1 0/VBUS NT C2 VBUS SENSE G4 E4 OUT2 VBUS 0/VBUS OUT1 E1 G1 0/VBUS SENSE NTC2 NTC1 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C A V W Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-5 APTGT100DH120TG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0 V, VCE = 1200V Tj = 25°C VGE =15V IC = 100A Tj = 125°C VGE = VCE , IC = 2 mA VGE = 20V, VCE = 0 V Min 1.4 5.0 Typ 1.7 2.0 5.8 Max 250 2.1 6.5 400 Unit µA V V nA Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy Test Conditions VGE = 0 V VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 100A R G = 3.9Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 100A R G = 3.9Ω Min Typ 7200 400 300 260 30 420 70 290 50 520 90 10 10 Max Unit pF ns ns mJ Diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Test Conditions VR=1200V IF = 100A VGE = 0 V IF = 100A VR = 600V di/dt =2000A/µs Min 1200 Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Typ Max 250 500 Unit V µA A 100 1.6 1.6 170 280 9 18 2.1 V ns µC APT website – http://www.advancedpower.com 2-5 APTGT100DH120TG – Rev 1 October, 2005 APTGT100DH120TG Temperature sensor NTC (see application note APT0406 on www.advancedpower.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K Min Typ 50 3952 Max Unit kΩ K RT = R 25   1 1  RT : Thermistor value at T exp B 25 / 85    T − T    25  T: Thermistor temperature Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode Min Typ Max 0.26 0.48 150 125 100 4.7 160 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol